Semiconductor device and method for manufacturing semiconductor device

ABSTRACT

A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method formanufacturing a semiconductor device. In particular, the presentinvention relates to a semiconductor device including a photoelectricconversion element.

2. Description of the Related Art

Among a variety of sensors, sensors which detect visible light with awavelength of 400 to 700 nm are referred to as optical sensors orvisible light sensors. Optical sensors or visible light sensors areknown to be used for, for example, detecting optical signals to readdata, detecting ambient brightness to control operation of electronicappliances, and the like.

For example, in cellular phones or television units, optical sensors areused for adjusting the luminance of display screens in accordance withthe ambient brightness of places where they are set.

Such a semiconductor device typified by the optical sensor or thevisible light sensor is formed in such a manner that transistors areformed over a substrate such as a glass substrate or a wafer substrate,and then the substrate is cut (divided).

In general, a step of cutting a substrate is performed as follows: agroove is formed on a surface of a substrate (referred to as scribing)with a scribing device and the substrate is cut along the groove. As ascribing method, a method using a laser is given as well as a mechanicalmethod using a diamond cutter or the like. In the case of the methodusing a laser, after local application of heat with a laser, anirradiated region is rapidly quenched, so that the substrate is crackeddue to thermal stress generated in the substrate. Further, a method isproposed, in which a short-pulse laser is used as a laser and a rapidquenching step is omitted to prevent the substrate from being thermallystrained in the rapid quenching step (for example, see Patent Document1: Japanese Published Patent Application No. 2007-331983).

SUMMARY OF THE INVENTION

However, a semiconductor device is likely to be damaged due to externalstress such as pressure applied in any of steps for manufacturing asemiconductor device except a step of cutting a substrate, or a step ofinspecting the semiconductor device. The thinner and the weaker asubstrate is, the more frequently damages such as cracks, chaps, andchips are generated.

Further, a blade of a dicer (a dicing blade) or the like used as ascribing device is expensive and, moreover, is required to be changedbecause it is worn away after being used a plurality of times.Therefore, it is difficult to reduce manufacturing cost.

In view of the above problems, an object is to reduce damages of asemiconductor device, such as cracks, chaps, and chips due to externalstress. Another object is to reduce the thickness of a substrateprovided with a semiconductor device. Another object is to increasemanufacturing yield of a semiconductor device reduced in thickness.Another object is to reduce manufacturing cost of a semiconductor devicereduced in thickness.

In the present invention, a substrate provided with a plurality ofsemiconductor integrated circuit portions is divided between thesemiconductor integrated circuit portions, so that a plurality ofsemiconductor integrated circuits are taken out in chip forms.

The semiconductor integrated circuit portion is an integrated circuitportion including a plurality of semiconductor elements and includes astack of thin films such as an insulating film, a semiconductor film,and a conductive film. In the present invention, the plurality of thesemiconductor integrated circuit portions are provided to be alignedover one substrate which has not been divided yet.

A semiconductor integrated circuit includes a photoelectric conversionelement and a chromatic color light-transmitting resin, and a pluralityof semiconductor integrated circuits having chip forms are bonded to astructure body in which a fibrous body is impregnated with an organicresin.

A structure body in which a fibrous body is impregnated with an organicresin is also referred to as a prepreg. A prepreg is specifically formedas follows: after a fibrous body is impregnated with a varnish in whicha matrix resin is diluted with an organic solvent, drying is performedso that the organic solvent is volatilized and the matrix resin issemi-cured. The thickness of the structure body is preferably largerthan or equal to 10 μm and smaller than or equal to 100 μm, morepreferably larger than or equal to 10 μm and smaller than or equal to 30μm. By using the structure body with such a thickness, a thinsemiconductor device capable of being bent can be manufactured.

A structural body is heated and subjected to pressure bonding so thatthe organic resin of the structure body is plasticized or cured. Notethat in the case where the organic resin is an organic plastic resin,the organic resin which has been plasticized is cured by being cooled toa room temperature. By heating and pressure bonding, the organic resinis uniformly spread so as to be in close contact with a semiconductorintegrated circuit and is cured. A step in which the structure body issubjected to pressure bonding is performed under an atmospheric pressureor a reduced pressure. The organic resin may be a photocurable material.After being in close contact with the semiconductor integrated circuit,the organic resin is cured by light irradiation and bonded.

Since the plurality of semiconductor integrated circuits to be bonded tothe structure body in which a fibrous body is impregnated with anorganic resin can be freely selected, the semiconductor integratedcircuits including chromatic color light-transmitting resins ofdifferent colors are bonded to the structure body in which a fibrousbody is impregnated with an organic resin, so that a semiconductordevice including semiconductor integrated circuits of a plurality ofcolors, each of which has a function of a color sensor, can bemanufactured.

For example, a semiconductor integrated circuit including a redlight-transmitting resin, a semiconductor integrated circuit including agreen light-transmitting resin, and a semiconductor integrated circuitincluding a blue light-transmitting resin are bonded to the structurebody in which a fibrous body is impregnated with an organic resin, sothat a semiconductor device including semiconductor integrated circuitseach including a photoelectric conversion element which detects red (R)light, green (G) light, or blue (B) light can be manufactured.

Further, a semiconductor integrated circuit can be subjected to aninspection step before being bonded to the structure body in which afibrous body is impregnated with an organic resin, so that only aconforming product can be selected and bonded to the structure body inwhich a fibrous body is impregnated with an organic resin. Thus, yieldof a semiconductor device is increased in a manufacturing process.Particularly in the case of a structure in which the semiconductorintegrated circuit includes a semiconductor integrated circuit portionincluding a complicated structure such as an amplifier circuit, sincethere is a possibility that defects are generated in the semiconductorintegrated circuit having a chip form, it is effective that thesemiconductor integrated circuit can be inspected for defects beforebeing bonded to the structure body in which a fibrous body isimpregnated with an organic resin. Further, a high-quality semiconductorintegrated circuit is selected from among conforming products to bebonded to the structure body in which a fibrous body is impregnated withan organic resin, so that a higher-quality semiconductor device can bemanufactured.

Further, a semiconductor integrated circuit according to an embodimentof the present invention has a structure in which at least a chromaticcolor light-transmitting resin layer covers a surface of alight-transmitting substrate, which is the reverse of the surface onwhich a semiconductor integrated circuit portion is formed and a part ofan end portion (side surface) of the light-transmitting substrate. Thus,the light-transmitting resin layer also functions as a shock absorbinglayer which absorbs external stress such as pressure which is applied ina manufacturing step or in the inspection step, so that defects such asa scratch and a crack of the semiconductor integrated circuit can bereduced, and a semiconductor device with high reliability can bemanufactured.

In a method for dividing into semiconductor integrated circuits,according to an embodiment of the present invention, first, alight-transmitting substrate is processed to be thin so that the timerequired for the division is reduced and wear of a process means such asa dicer used for the division is suppressed. Further, a dividing step isnot performed at one time. First, a groove for dividing semiconductorintegrated circuit portions is formed in the light-transmittingsubstrate, and a light-transmitting resin layer is formed over thelight-transmitting substrate provided with the groove. After that, thelight-transmitting resin layer and the light-transmitting substrate arecut along the groove, and divided into the plurality of semiconductorintegrated circuits. The light-transmitting resin layer is a coloringlayer of chromatic color which functions as at least a color filter, anda transparent light-transmitting resin layer may be further stacked overthe light-transmitting layer as a shock absorbing layer.

Chromatic colors are colors except chromatic colors such as black, gray,and white. The coloring layer is formed using a material which transmitsonly light of a chromatic color with which the material is colored inorder to function as a color filter. As a chromatic color, red, green,blue, or the like can be used. Alternatively, cyan, magenta, yellow, orthe like may be used.

When a light-blocking material is used for the structure body in which afibrous body is impregnated with an organic resin, the structure body inwhich a fibrous body is impregnated with an organic resin can functionas a light-blocking film.

An embodiment of a semiconductor device of the present inventionincludes a plurality of semiconductor integrated circuits bonded to astructure body in which a fibrous body is impregnated with an organicresin. The plurality of semiconductor integrated circuits are providedin openings formed in the structure body and each include alight-transmitting substrate having a step section on a first surfaceand in which the width of the step section (a projected portion) on thefirst surface side is smaller than that of the other portion, asemiconductor integrated circuit portion including a photoelectricconversion element provided on a second surface of thelight-transmitting substrate, and a chromatic color light-transmittingresin layer which covers the first surface and part of side surfaces ofthe light-transmitting substrate. The plurality of semiconductorintegrated circuits include the chromatic color light-transmitting resinlayers of different colors. The cross section of the light-transmittingsubstrate can also be said to have a shape of upside-down T in blockletter. The projected portion refers to an upper portion of thelight-transmitting substrate in the case where the surface of thelight-transmitting substrate, on which the semiconductor integratedcircuit portion is formed, faces downward.

If the cross section of the light-transmitting substrate is a shape ofupside-down T in block letter, the light-transmitting resin layer can beprovided so as to fill the cut portion of the end portion of thelight-transmitting substrate.

An embodiment of a semiconductor device of the present inventionincludes a plurality of semiconductor integrated circuits bonded to astructure body in which a fibrous body is impregnated with an organicresin. The plurality of semiconductor integrated circuits are providedin openings formed in the structure body and each include alight-transmitting substrate one surface of which is a top surface andanother surface of which is a bottom surface and the light-transmittingsubstrate has stepped sides and a trapezoid cross section in which thethickness of an upper portion is smaller than the thickness of a lowerportion, a semiconductor integrated circuit portion including aphotoelectric conversion element provided on the bottom surface of thelight-transmitting substrate, and a chromatic color light-transmittingresin layer which covers the top surface and part of side surfaces ofthe light-transmitting substrate. The plurality of semiconductorintegrated circuits include the chromatic color light-transmitting resinlayers of different colors. Depending on the shape of a groove formed inthe manufacturing process of the semiconductor integrated circuit, thetrapezoid shape of the light-transmitting substrate of the semiconductorintegrated circuit is curved from the upper portion to the lowerportion.

In the trapezoid cross section of the light-transmitting substrate, whenthe trapezoid is curved from the upper portion to the lower portion,coverage of the curved portion with the light-transmitting resin layeris good.

In the case where the light-transmitting resin layer in contact with thelight-transmitting substrate is a chromatic color light-transmittingresin layer and another light-transmitting resin layer is further formedover the light-transmitting resin layer, there are advantageous effectsthat the light-transmitting resin layer functions as a protective layerand has an excellent shock absorbing property, and deterioration of thechromatic color light-transmitting resin layer can also be prevented.The thickness of the light-transmitting resin layer functioning as ashock absorbing layer may be larger than that of the light-transmittingresin layer functioning as a coloring layer. By being formed to bethick, the light-transmitting resin layer functioning as a shockabsorbing layer can be further increased in shock absorption property.On the other hand, the thickness of the chromatic colorlight-transmitting resin layer is preferably controlled in order thatthe chromatic color light-transmitting resin layer may function as acoloring layer (color filter) in consideration of the relation betweenthe concentration of the coloring material to be included andtransmissivity of light.

In the above structure, an embodiment of the semiconductor device may bethat the side surface of the light-transmitting substrate in contactwith the light-transmitting resin layer is a curved surface whichspreads toward the bottom. The light-transmitting substrate has thecurved side surface which spreads toward the bottom, whereby thelight-transmitting resin layer can be provided so as to cover the curvedside surface. Further, a bottom surface and a top surface of thelight-transmitting substrate are quadrangles, and the area of the bottomsurface is larger than that of the top surface. In thelight-transmitting substrate of a semiconductor device in thisspecification, the surface in contact with a light-transmitting resinlayer is referred to as a top surface, and the surface provided with thesemiconductor integrated circuit portion is referred to as a bottomsurface. In the case where the area of the bottom surface of thelight-transmitting substrate is larger than that of the top surface ofthe light-transmitting substrate, the light-transmitting resin layer canbe formed on a side surface in the region where the bottom surface andthe top surface do not overlap with each other so as to cover thelight-transmitting substrate.

As thus described, the semiconductor device of the present invention hasa complicated shape; therefore, top and bottom sides of thesemiconductor device can be easily distinguished. Thus,misidentification even in an automatic operation by a machine can bereduced.

Further, the semiconductor integrated circuit includes an amplifiercircuit for amplifying the output of the photoelectric conversionelement. The photoelectric conversion element may have a layeredstructure in which a p-type semiconductor layer, an i-type semiconductorlayer, and an n-type semiconductor layer are stacked.

In this specification, an i-type semiconductor corresponds to thesemiconductor in which the concentration of an impurity which impartsp-type or n-type conductivity is 1×10²⁰ cm⁻³ or less; the concentrationof oxygen and nitrogen is 1×10²⁰ cm⁻³ or less; and photoconductivityexceeds dark conductivity by 100 times or more. The i-type semiconductormay include an impurity element which belongs to Group 13 or Group 15 ofthe periodic table. That is, the i-type semiconductor has weak n-typeelectric conductivity when an impurity element for controlling valenceelectrons is not added intentionally. Therefore, an impurity elementimparting p-type conductivity may be added to an i-type semiconductorlayer intentionally or unintentionally at the time of film formation orafter the film formation.

A method for manufacturing a semiconductor device, according to anembodiment of the present invention, includes the following steps:cutting out a first semiconductor integrated circuit including a firstchromatic color light-transmitting resin layer and a first photoelectricconversion element from a first light-transmitting substrate; cuttingout a second semiconductor integrated circuit including a secondchromatic color light-transmitting resin layer and a secondphotoelectric conversion element from a second light-transmittingsubstrate; cutting out a third semiconductor integrated circuitincluding a third chromatic color light-transmitting resin layer and athird photoelectric conversion element from a third light-transmittingsubstrate; providing the first semiconductor integrated circuit, thesecond semiconductor integrated circuit, and the third semiconductorintegrated circuit into openings in a structure body in which a fibrousbody is impregnated with an organic resin; and bonding the firstsemiconductor integrated circuit, the second semiconductor integratedcircuit, and the third semiconductor integrated circuit to the structurebody in which a fibrous body is impregnated with an organic resin. Thefirst chromatic color light-transmitting resin layer, the secondchromatic color light-transmitting resin layer, and the third chromaticcolor light-transmitting resin layer include different coloringmaterials.

In the above structure, before the first semiconductor integratedcircuit, the second semiconductor integrated circuit, and the thirdsemiconductor integrated circuit are bonded to the structure body inwhich a fibrous body is impregnated with an organic resin, an inspectionstep may be performed on the first semiconductor integrated circuit, thesecond semiconductor integrated circuit, and the third semiconductorintegrated circuit. A semiconductor device can be formed by bonding aconforming product selected through the inspection step to the structurebody in which a fibrous body is impregnated with an organic resin.

In the above structure, the first semiconductor integrated circuit, thesecond semiconductor integrated circuit, and the third semiconductorintegrated circuit are formed by forming a plurality of semiconductorintegrated circuit portions over each of the first light-transmittingsubstrate, the second light-transmitting substrate, and the thirdlight-transmitting substrate. The thickness of each of the firstlight-transmitting substrate, the second light-transmitting substrate,and the third light-transmitting substrate is reduced. A groove isformed on each of the first light-transmitting substrate, the secondlight-transmitting substrate, and the third light-transmitting substrateand the groove is overlapped with a portion between the plurality ofsemiconductor integrated circuit portions. The first chromatic colorlight-transmitting resin layer, the second chromatic colorlight-transmitting resin layer, and the third chromatic colorlight-transmitting resin layer are formed over the firstlight-transmitting substrate, the second light-transmitting substrate,and the third light-transmitting substrate in each of which the grooveis formed, respectively. Each of the groove of the firstlight-transmitting substrate and the first chromatic colorlight-transmitting resin layer, the groove of the secondlight-transmitting substrate and the second chromatic colorlight-transmitting resin layer, and the groove of the thirdlight-transmitting substrate and the third chromatic colorlight-transmitting resin layer are cut.

In the case where an alignment marker is formed on thelight-transmitting substrate when the light-transmitting substrate inwhich a groove is formed and the light-transmitting resin layer are cut,precision of a place to be cut can be improved by cutting thelight-transmitting substrate and the light-transmitting resin layer fromthe light-transmitting substrate side by a cutting means such as adicer.

In either of the step of forming the groove and the step of dividing thelight-transmitting substrate, a dicer, a scriber, or the like can beused as a cutting tool. A dicer is preferably used. In a step of forminga groove with a dicer and a step of dividing a light-transmittingsubstrate between semiconductor integrated circuit portions with adicer, a dicing blade is used. The edge of the dicing blade used in thestep of forming a groove is thicker than that of the dicing blade usedin the step of dividing the light-transmitting substrate. That is tosay, when cutting traces are compared, the cutting trace in the step offorming a groove is wider than that in the step of dividing thelight-transmitting substrate. The meaning of a cutting trace here is thewidth of a groove in the case of a groove, and is the width of theregion where a light-transmitting substrate member is lost betweenelements before and after division in the case of the step of dividingthe light-transmitting substrate when the light-transmitting substrateis fixed (also referred to as the width of a cut surface).

In a step of polishing the light-transmitting substrate to reduce thethickness, any of a glass polishing machine, a glass grinding machine,and the like is used in suitable combination. Wear of a dicing blade canbe reduced by this polishing step. In addition, by providing thelight-transmitting resin layer, generation of a crack in a desiredelement can be suppressed when a thin light-transmitting substrate ishandled and divided. Moreover, a scratch and a crack in the case wherethe semiconductor integrated circuits having chip forms hit each otherin being handled after division can be reduced, and yield in a visualexamination of the semiconductor device can be increased. Furthermore,since the thickness of the light-transmitting substrate after divisionis small, the semiconductor device on which a semiconductor integratedcircuit according to an embodiment of the present invention is mountedcan be reduced in thickness.

Since the cutting trace in the step of forming a groove is wider thanthat in the step of dividing the light-transmitting substrate, the resinlayer can be left on an end surface of the light-transmitting substratewhen the light-transmitting substrate is divided in the step of dividingthe light-transmitting substrate. That is, the resin layer is formed inthe region of the side surface of the light-transmitting substrate, inwhich a groove is formed. On the other hand, the surface on which asemiconductor integrated circuit portion is formed and the region wherethe light-transmitting substrate is in contact with a dicing blade whenthe dicing blade is used in the dividing step are not covered with theresin layer.

According to an embodiment of the present invention, a resin covers asurface of a light-transmitting substrate which is the reverse of thesurface on which a semiconductor integrated circuit portion is formedand a region of the side surface of the light-transmitting substrate,whereby generation of a scratch and a crack can be reduced and thus asemiconductor device can be formed with high yield.

Therefore, a highly reliable semiconductor device which is easilytreated although it is thin can be provided.

Before the light-transmitting substrate is divided, the thickness of thelight-transmitting substrate is reduced, and the dividing step isperformed in two steps, so that wear of a cutting tool when thelight-transmitting substrate is processed and divided can be reduced.Since the region which is processed by the cutting tool increases as thesize of the light-transmitting substrate increases and as the size ofeach of semiconductor integrated circuits which are obtained by divisionis reduced, the cutting tool wears out further. Therefore, an embodimentof the present invention by which wear of the cutting tool can bereduced is particularly beneficial to a large substrate and a smallersemiconductor integrated circuit. Therefore, a semiconductor device canbe manufactured at low cost. The thickness of a semiconductor device canbe reduced because the thickness of the light-transmitting substrate issmall.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A and 1B illustrate a semiconductor device according to anembodiment of the present invention;

FIGS. 2A and 2B illustrate a semiconductor device according to anembodiment of the present invention;

FIGS. 3A to 3F illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIGS. 4A and 4B illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIGS. 5A to 5D illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIGS. 6A to 6C illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIGS. 7A and 7B illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIGS. 8A and 8B illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention;

FIG. 9 illustrates a semiconductor device according to an embodiment ofthe present invention;

FIGS. 10A to 10C each illustrate a device on which a semiconductordevice according to an embodiment of the present invention is mounted;

FIGS. 11A and 11B each illustrate a device on which a semiconductordevice according to an embodiment of the present invention is mounted;

FIG. 12 illustrates a device on which a semiconductor device accordingto an embodiment of the present invention is mounted;

FIGS. 13A and 13B illustrate a device on which a semiconductor deviceaccording to an embodiment of the present invention is mounted;

FIG. 14 illustrates a device on which a semiconductor device accordingto an embodiment of the present invention is mounted;

FIGS. 15A to 15D illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention; and

FIGS. 16A to 16C illustrate a method for manufacturing a semiconductordevice, according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The embodiments of the present invention will be described withreference to the accompanying drawings. However, the present inventionis not limited to the following description, and it will be easilyunderstood by those skilled in the art that various changes andmodifications can be made to the modes and their details withoutdeparting from the spirit and scope of the present invention. Therefore,the present invention should not be construed as being limited to thedescription in the following embodiments. Note that a common referencenumeral refers to the same part or a part having a similar functionthroughout the drawings in the structure of the present inventiondescribed below, and the description thereof is omitted.

Embodiment 1

In this embodiment, a semiconductor device for realizing reduction inthickness and size and a method for manufacturing the semiconductordevice with high yield are described in detail with reference to FIGS.1A and 1B, FIGS. 2A and 2B, FIGS. 3A to 3F, FIGS. 4A and 4B, FIGS. 5A to5D, FIGS. 6A to 6C, FIGS. 7A and 7B, and FIGS. 8A and 8B.

FIGS. 1A and 1B illustrate a semiconductor device of this embodiment.FIG. 1A is a plan view of the semiconductor device, and FIG. 1B is across-sectional view along Y-Z in FIG. 1A.

The semiconductor device in FIGS. 1A and 1B has a structure in which asemiconductor integrated circuit 112R, a semiconductor integratedcircuit 112G, and a semiconductor integrated circuit 112B are bonded toa structure body 160 in which a fibrous body 161 is impregnated with anorganic resin 162. The semiconductor integrated circuit 112R, thesemiconductor integrated circuit 112G, and the semiconductor integratedcircuit 112B are provided with terminal electrodes 115 aR and 115 bR,115 aG and 115 bG, and 115 aB and 115 bB which are conductive layers forelectrical connection to the outside, respectively.

FIG. 1A illustrates a top view of a woven fabric as the fibrous body 161which is woven using fiber yarn bundles for warp and weft.

As illustrated in FIG. 1A, the fibrous body 161 is woven using warpyarns spaced at regular intervals and weft yarns spaced at regularintervals. Such a fibrous body which is woven using the warp yarns andthe weft yarns has regions without the warp yarns and the weft yarns. Inthe fibrous body 161, the fibrous body is more easily impregnated withthe organic resin 162, whereby adhesiveness between the fibrous body 161and the semiconductor integrated circuits 112R, 112G, and 112B can beincreased.

Further, in the fibrous body 161, density of the warp yarns and the weftyarns may be high and a proportion of the regions without the warp yarnsand the weft yarns may be low.

The structure body 160 in which the fibrous body 161 is impregnated withthe organic resin 162 is also referred to as a prepreg. A prepreg isformed specifically as follows: after a fibrous body is impregnated witha varnish in which a matrix resin is diluted with an organic solvent,drying is performed so that the organic solvent is volatilized and thematrix resin is semi-cured. The thickness of the structure body 160 ispreferably larger than or equal to 10 μm and smaller than or equal to100 μm, more preferably larger than or equal to 10 μm and smaller thanor equal to 30 μm. With the use of the structure body with such athickness, a semiconductor device which is thin and can be bent can beformed.

Note that in this embodiment, the structure body in which a fibrous bodyis impregnated with an organic resin may have a layered structure. Inthat case, the structure body may be a stack of a plurality of structurebodies in each of which a single-layer fibrous body is impregnated withan organic resin or may be a structure body formed in which a pluralityof fibrous bodies stacked are impregnated with an organic resin.Further, in stacking a plurality of structure bodies in each of which asingle-layer fibrous body is impregnated with an organic resin, anotherlayer may be sandwiched between the structure bodies.

The semiconductor integrated circuits 112R, 112G, and 112B can bemounted on different substrates by using the terminal electrodes.

The semiconductor integrated circuit 112R, the semiconductor integratedcircuit 112G, and the semiconductor integrated circuit 112B function ascolor sensors and include light-transmitting substrates 109R, 109G, and109B, semiconductor integrated circuit portions 101R, 101G, and 101Bwhich include photoelectric conversion elements, and chromatic colorlight-transmitting resin layers 114R, 114G, and 114B which function ascolor filters, respectively. In this embodiment, the semiconductorintegrated circuit 112R, the semiconductor integrated circuit 112G, andthe semiconductor integrated circuit 112B include a redlight-transmitting resin layer 114R, a green light-transmitting resinlayer 114G, and a blue light-transmitting resin layer 114B,respectively, and can transmit and detect light of the colors of thelight-transmitting resin layers 114R, 114G, and 114B. Therefore, asemiconductor device of this embodiment including the semiconductorintegrated circuit 112R, the semiconductor integrated circuit 112G, andthe semiconductor integrated circuit 112B can detect light of threecolors (red, green, and blue).

Further, the semiconductor integrated circuit 112R, the semiconductorintegrated circuit 112G, and the semiconductor integrated circuit 112Bhave a structure in which at least the chromatic colorlight-transmitting resin layers 114R, 114G, and 114B cover surfaces ofthe light-transmitting substrates 109R, 109G, and 109B which are thereverse of surfaces on which the semiconductor integrated circuitportions 101R, 101G, and 101B are formed and part of the end portions(side surfaces) of the light-transmitting substrates 109R, 109G, and109B, respectively. Thus, the light-transmitting resin layers 114R,114G, and 114B also function as shock absorbing layers which absorbexternal stress such as pressure which is applied in the manufacturingstep or in the inspection step, so that generation of defects such as ascratch and a crack of the semiconductor integrated circuits 112R, 112G,and 112B can be reduced and thus a semiconductor device with highreliability can be formed.

Chromatic colors are colors except achromatic colors such as black,gray, and white. The coloring layer is formed using a material whichtransmits only light of a chromatic color with which the material iscolored in order to function as the color filter. As a chromatic color,red, green, blue, or the like can be used. Alternatively, cyan, magenta,yellow, or the like may be used.

The light-transmitting resin layers 114R, 114G, and 114B are chromaticcolor coloring layers which function as at least color filters, and atransparent light-transmitting resin layer may be further stackedthereover as a shock absorbing layer. FIGS. 2A and 2B illustrateexamples in which light-transmitting resin layers are stacked in thesemiconductor device in FIGS. 1A and 1B. FIG. 2A is a plan view of asemiconductor device. FIG. 2B is a cross-sectional view along Y-Z inFIG. 2A.

The semiconductor device of FIGS. 2A and 2B is an example in which thesemiconductor integrated circuits 112R, 112G, and 112B in whichtransparent light-transmitting resin layers 110R, 110G, and 110B arestacked over the chromatic color light-transmitting resin layers 114R,114G, and 114B, respectively, are bonded to the structure body 160formed by impregnating the fibrous body 161 with the organic resin 162.The chromatic color light-transmitting resin layers 114R, 114G, and 114Bare formed in contact with the light-transmitting substrates. Then, thetransparent light-transmitting resin layers 110R, 110G, and 110B arestacked over the chromatic color light-transmitting resin layers 114R,114G, and 114B, respectively.

The transparent light-transmitting resin layers 110R, 110G, and 110Bfunction as protective layers and have advantages of improving a shockabsorption property and in preventing the chromatic colorlight-transmitting resin layers 114R, 114G, and 114B from deteriorating.

The thickness of each of the light-transmitting resin layers may belarger than or equal to 1 μm and small than or equal to 20 μm. In thecase where the light-transmitting resin layers are stacked, thethickness of the transparent light-transmitting resin layers 110R, 110G,and 110B which function as shock absorbing layers may be approximatelyequal (for example, 1.2 μm in thickness) to or different from that ofthe light-transmitting resin layers 114R, 114G, and 114B which functionas coloring layers.

Alternatively, the thickness of the transparent light-transmitting resinlayers 110R, 110G, and 110B which function as shock absorbing layers maybe larger than that of the chromatic color light-transmitting resinlayers 114R, 114G, and 114B which function as coloring layers. By beingformed to be thick, the transparent light-transmitting resin layers110R, 110G, and 110B which function as shock absorbing layers can haveexcellent shock absorption properties as the shock absorbing layers. Onthe other hand, in order that the chromatic color light-transmittingresin layers 114R, 114G, and 114B may function as coloring layers (colorfilters), the suitable thickness of the chromatic colorlight-transmitting resin layers 114R, 114G, and 114B is preferablycontrolled as appropriate in consideration of the relation between theconcentration of coloring material to be contained and lighttransmissivity.

For example, when the thickness of the transparent light-transmittingresin layers 110R, 110G, and 110B which function as shock absorbinglayers is larger than that of the light-transmitting resin layers 114R,114G, and 114B which function as coloring layers, the thickness of thetransparent light-transmitting resin layers 110R, 110G, and 110B whichfunction as shock absorbing layers may be larger than or equal to 5 μmand smaller than or equal to 10 μm, and the thickness of thelight-transmitting resin layers 114R, 114G, and 114B which function ascoloring layers may be larger than or equal to 0.1 μm and smaller thanor equal to 1 μm.

The side surfaces of the light-transmitting substrates 109R, 109G, and109B are provided with steps. As for the width of each of thelight-transmitting substrates 109R, 109G, and 109B, the width of theprojected section is smaller than that of the other section. Therefore,the cross section of each of the light-transmitting substrates 109R,109G, and 109B can also be said to have a shape of upside-down T inblock letter. The projected section refers to an upper portion of eachof the light-transmitting substrate 109R, 109G, and 109B in the casewhere the surfaces of the light-transmitting substrates 109R, 109G, and109B, on which the semiconductor integrated circuit portions 101R, 101G,and 101B are formed respectively, face downward.

If the cross section of the light-transmitting substrate is a shape ofupside-down T in block letter, the light-transmitting resin layer can beprovided so as to fill the cut portion of the end portion of thelight-transmitting substrate.

In the semiconductor integrated circuit of this embodiment, the sidesurface of the light-transmitting substrate in contact with thelight-transmitting resin layer may be a curved surface which spreadstoward the bottom. The light-transmitting substrate has the curvedsurface which spreads toward the bottom, whereby the light-transmittingresin layer can be provided so as to cover the curved surface. Further,a bottom surface and a top surface of the light-transmitting substrateare quadrangles, and the area of the bottom surface is larger than thatof the top surface. In the case where the area of the bottom surface ofthe light-transmitting substrate is larger than that of the top surfaceof the light-transmitting substrate, the light-transmitting resin layercan be formed on the side surface in the region where the bottom surfaceand the top surface do not overlap with each other, so as to cover thelight-transmitting substrate.

According to the present invention, a substrate provided with aplurality of semiconductor integrated circuit portions is dividedbetween the semiconductor integrated circuit portions so that theplurality of semiconductor integrated circuits can be taken out in thechip forms. In the dividing method, first, the substrate is processed tobe thin, whereby the time for dividing the substrate is reduced and wearof the process means such as a dicer used for the division issuppressed. Further, the dividing step is not performed at one time.First, a groove for dividing into the semiconductor integrated circuitportions is formed in the light-transmitting substrate, and a stack ofthe light-transmitting resin layers is formed over thelight-transmitting substrate provided with the groove. After that, thelight-transmitting resin layers and the light-transmitting substrate arecut along the groove so as to be divided into the plurality ofsemiconductor integrated circuits.

The cross section of the light-transmitting substrate 109 (109R, 109G,109B) is a trapezoid with stepped sides, and the thickness of the upperportion of the stepped trapezoid may be equal to or smaller than that ofthe lower portion of the stepped trapezoid. Further, the thickness ofthe upper portion of the stepped trapezoid is preferably smaller thanthat of the structure body in which a fibrous body is impregnated withan organic resin because the light-transmitting substrate 109 does notbecome higher than the structure body in which a fibrous body isimpregnated with an organic resin. Depending on the shape of the groove,the side surface of the upper portion of the stepped trapezoid curvestoward the lower portion.

In the cross section of the light-transmitting substrate which is atrapezoid, in the case where the trapezoid curves from the upper portionto the lower portion, coverage of the curved portion with thelight-transmitting resin layer is good.

As thus described, the semiconductor integrated circuit of the presentinvention has a complicated shape, so that top, bottom, right, and leftsides of the semiconductor integrated circuit can be easilydistinguished. Thus, misidentification even in an automatic operation bya machine can be reduced.

Further, when a light-blocking material is used for a structure body 116in which a fibrous body 117 is impregnated with an organic resin 118 asin FIG. 9, the structure body 116 can be used as a black matrix. In FIG.9, the semiconductor integrated circuits 112R, 112G, and 112B are bondedto the structure body formed using a light-blocking material, in which afibrous body is impregnated with an organic resin.

Further, a light-blocking layer which serves as a black matrix may beseparately provided over the chromatic color light-transmitting resinlayer selectively. The light-blocking layer can be formed by a coatingmethod such as a spin coating method; a droplet discharge method; aprinting method; a dipping method; a dispenser method; a brush paintingmethod; a spray method; a flow coating method; or the like. By using aprinting method, the light-blocking layer can be selectively formed, sothat a process for obtaining a desired shape, such as a photolithographyprocess, can be simplified.

The light-transmitting structure body 116 in which the fibrous body 117is impregnated with the organic resin 118 is formed to have openingscorresponding to the regions where photoelectric conversion elements areprovided in the semiconductor integrated circuit portions 101R, 101G,and 101B. The structure body 116 in which the fibrous body 117 isimpregnated with the organic resin 118 functions as the black matrix andshields the photoelectric conversion element from external light whichis unintentionally delivered, so that malfunction is prevented.Therefore, since the photoelectric conversion element can receive onlythe light which has passed through the opening of the structure body 116in which the fibrous body 117 is impregnated with the organic resin 118and the chromatic color light-transmitting resin layers 114R, 114G, and114B which function as color filters, reliability of a semiconductordevice is improved. When the semiconductor element which is formed inthe semiconductor integrated circuit portion is irradiated with light,change of characteristics is possible; however, providing thelight-blocking layer can prevent such a defect.

A method for manufacturing a semiconductor device in this embodimentwill be described below in detail.

FIG. 3A illustrates semiconductor integrated circuit portions 101 a, 101b, and 101 c which are provided over a light-transmitting substrate 100and include the photoelectric conversion elements. The semiconductorintegrated circuit portions 101 a, 101 b, and 101 c include terminalelectrodes 115 a 1 and 115 b 1, 115 a 2 and 115 b 2, and 115 a 3 and 115b 3, respectively.

Next, a step of reducing the thickness of the light-transmittingsubstrate 100 by grinding treatment and/or polishing treatment isperformed. The side on which the semiconductor element layers 101 a, 101b, and 101 c are formed is made to face a fixing tape 103 for fixing thelight-transmitting substrate 100 in the step, the light-transmittingsubstrate 100 is fixed, and the light-transmitting substrate 100 isprocessed into a light-transmitting substrate 102 which is thin (seeFIG. 3B). In the case where the light-transmitting substrate 100 is aglass substrate with a thickness of 0.5 mm, the light-transmittingsubstrate 102 is preferably thinned to approximately 0.25 to 0.3 mm. Byreducing the thickness of the light-transmitting substrate, the processtime for dividing the light-transmitting substrate can be reduced, andwear of a processing means such as a dicer used for the division can bereduced. Grinding treatment and polishing treatment can be preferablyused in combination. In this embodiment, a substrate is ground by agrinder and after that, a surface of the substrate is planarized withpolishing treatment by a polisher. As the polishing treatment, chemicalmechanical polishing may be performed.

The plurality of semiconductor integrated circuits having the chip formsare taken out by dividing the light-transmitting substrate. The dividingstep is not performed at one time. First, grooves 106 a, 106 b, 106 c,and 106 d for dividing between the semiconductor integrated circuitportions 101 a, 101 b, and 101 c and bonding them to the structure bodyin which a fibrous body is impregnated with an organic resin are formedin the light-transmitting substrate 102 by a dicing blade of a dicer 104(see FIG. 3C). Below the grooves 106 a, 106 b, 106 c, and 106 d in alight-transmitting substrate 105, the light-transmitting substrate 105is intentionally left.

Since the grooves 106 a, 106 b, 106 c, and 106 d serve as attachmentregions (bonding regions) of the structure body in which a fibrous bodyis impregnated with an organic resin in a later step, the depth of thegrooves 106 a, 106 b, 106 c, and 106 d is preferably smaller (shallower)than the thickness of the structure body in which a fibrous body isimpregnated with an organic resin. In the case where the depth of thegrooves 106 a, 106 b, 106 c, and 106 d is smaller (shallower) than thethickness of the structure body in which a fibrous body is impregnatedwith an organic resin, when the structure body in which a fibrous bodyis impregnated with an organic resin is bonded by pressure bonding, apressure is easily applied. Therefore, the depth of the grooves 106 a,106 b, 106 c, and 106 d may be approximately larger than or equal to 10μm and smaller than or equal to 100 μm (is preferably approximatelylarger than or equal to 10 μm and smaller than or equal to 30 μm).

Although FIG. 3C illustrates an example in which a groove is formed atone time by the dicer 104 having the width a₁, a groove may be formed bygrinding the light-transmitting substrate 102 a plurality of times by adicer having a smaller width.

Next, a stack of a light-transmitting resin layer 113 and alight-transmitting resin layer 107 is formed over the light-transmittingsubstrate 102 in which the grooves 106 a, 106 b, 106 c, and 106 d areformed (see FIG. 3D). As a material of the light-transmitting resinlayers 113 and 107, a resin material which can withstand heattemperature is used in the case where heat treatment is used in a stepafter the light-transmitting resin layer is formed (for example, at thetime of being bonded to the structure body in which a fibrous body isimpregnated with an organic resin or being mounted on anothersubstrate). One of the stacked light-transmitting resin layers is achromatic color coloring layer which functions as a color filter, andthe other is a resin layer which functions as a shock absorbing layer.In this embodiment, the light-transmitting resin layer 113 including achromatic color coloring material is formed.

Forming the light-transmitting resin layer 107 which functions as ashock absorbing layer can give higher stress resistance to asemiconductor integrated circuit and a semiconductor device. Forexample, even when a pressure of approximately 20 N is applied, asemiconductor integrated circuit provided with the light-transmittingresin layer according to an embodiment of the present invention canwithstand the pressure without being damaged.

For the light-transmitting resin layer, a resin material such as a vinylresin, an epoxy resin, a phenol resin, a novolac resin, an acrylicresin, a melamine resin, an urethane resin, or a siloxane resin can beused. As a method for forming the resin layer, an coating method such asa spin coating method can be used. Alternatively, a droplet dischargemethod, a printing method, a dipping method, a dispenser method, a brushcoating method, a spraying method, a flow coating method, or the likecan be used.

After that, the light-transmitting resin layers 113 and 107 and thelight-transmitting substrate 105 are cut along the grooves 106 a, 106 b,106 c, and 106 d so as to be divided into the plurality of semiconductorintegrated circuits. In this embodiment, the light-transmittingsubstrate 105 and the light-transmitting resin layers 113 and 107 arefixed to a fixing tape 111, and the light-transmitting substrate 105 andthe light-transmitting resin layers 113 and 107 which are left in thegrooves 106 a, 106 b, 106 c, and 106 d are cut from thelight-transmitting substrate 105 side by a dicer 108 having the widtha2. By the dicer 108, the light-transmitting substrate 105 and thelight-transmitting resin layers 113 and 107 are divided to formlight-transmitting substrates 109 a, 109 b, and 109 c, andlight-transmitting resin layers 114 a, 114 b, 114 c, 110 a, 110 b, and110 c (see FIG. 3E). In this embodiment, a dicing tape is used as thefixing tapes 103 and 111.

When the light-transmitting substrate 105 in which the grooves areformed and the light-transmitting resin layers 113 and 107 are cut, theycan be cut from the light-transmitting substrate 105 side or thelight-transmitting resin layers 113 and 107 side. An alignment markermay be formed on the light-transmitting substrate 105.

Through the above steps, semiconductor integrated circuits 112 a, 112 b,and 112 c can be formed (see FIG. 3F). The width of a cut surface wherethe light-transmitting resin layers 113 and 107 and thelight-transmitting substrate 105 are cut is made smaller than the widthof the groove, whereby the resin layer formed in the groove can be lefton side surfaces of the light-transmitting substrate. In thisembodiment, the width of the dicer 104 and the width of the dicer 108each correspond to the thickness of a dicing blade by which a smallestprocess region (a region to be processed by the dicer) is determined.

The width of the groove can be controlled by the width a₁ of the dicingblade of the dicer 104, and the width of the cut surface can becontrolled by the width a₂ of the dicing blade of the dicer 108.Accordingly, the width a₂ of the dicing blade of the dicer 108 may bemade smaller than the width a₁ of the dicing blade of the dicer 104.

Accordingly, in the semiconductor integrated circuits 112 a, 112 b, and112 c, surfaces where the semiconductor integrated circuit portions 101a, 101 b, and 101 c are not provided and part of side surfaces arecovered with the light-transmitting resin layers 114 a, 114 b, 114 c,110 a, 110 b, and 110 c.

The shape of the groove formed in the light-transmitting substratedepends on a processing means. In this embodiment, since the shape ofthe dicing blade of the dicer 104 is slightly rounded, the grooves 106a, 106 b, 106 c, and 106 d also have rounded shapes (shapes withcurvature) in the cross section in FIG. 1B. When the shape of the dicingblade is rectangular, the shape of the groove is also rectangular,whereby an end portion of the light-transmitting substrate in thesemiconductor integrated circuit after the division can also have arectangular shape.

Further, since the thickness of the substrate is larger than that of thelight-transmitting resin layer, the thickness of the light-transmittingresin layer is also preferably large in order that coverage of endportions of the substrate may be improved. By being formed to have alayered structure as in FIG. 2B, the light-transmitting resin layer canbe formed to be thick. The shape of a semiconductor integrated circuitto be completed can be freely changed depending on the structure, thethickness, or the cut position of the light-transmitting resin layer.

Dividing with a dicer with a thin dicing blade may leave a large grooveregion of the light-transmitting substrate in the completedsemiconductor integrated circuit. The structure body in which a fibrousbody is impregnated with an organic resin is bonded to the grooveregion; therefore, as the groove region is larger, bonding strength isfurther increased. Stacking a light-transmitting resin layer functioningas a shock absorbing material can give higher stress resistance to thesemiconductor integrated circuit.

Further, in the present invention, a groove is formed and alight-transmitting resin layer is formed thereover, so that thelight-transmitting resin layer can be formed to be thick on a bottomsurface of the groove. Further, after the light-transmitting resin layeris formed, the stack of the light-transmitting resin layer and thelight-transmitting substrate is cut; therefore, the end portions of thelight-transmitting resin layer are aligned with those of thelight-transmitting substrate in the side surfaces. The upper endportions of the light-transmitting substrate are not exposed in the sidesurfaces; therefore, the end portions of the light transmittingsubstrate can be prevented from being damaged or getting chipped.Further, in the case where the light-transmitting resin layer is formedto have a layered structure so as to be thick, the distance between theend portion of the light-transmitting substrate and the end portion ofthe light-transmitting resin layer can be long in the side surface ofthe semiconductor integrated circuit. Therefore, a damage to the endportion of the light-transmitting substrate can be suppressed.

As illustrated in FIGS. 3A to 3F, a plurality of semiconductorintegrated circuits formed on substrates and obtained by division arebonded to the structure body in which a fibrous body is impregnated withan organic resin, so that a semiconductor device including the pluralityof semiconductor integrated circuits is manufactured.

In FIG. 4A, the semiconductor integrated circuits 112R, 112G, and 112Bare formed on substrates as in FIGS. 3A to 3F.

The semiconductor integrated circuit 112R, the semiconductor integratedcircuit 112G, and the semiconductor integrated circuit 112B function ascolor sensors and include light-transmitting substrates 109R, 109G, and109B, semiconductor integrated circuit portions 101R, 101G, and 101Bwhich include photoelectric conversion elements, and chromatic colorlight-transmitting resin layers 114R, 114G, and 114B which function ascolor filters, respectively. In this embodiment, the semiconductorintegrated circuit 112R, the semiconductor integrated circuit 112G, andthe semiconductor integrated circuit 112B include a redlight-transmitting resin layer 114R, a green light-transmitting resinlayer 114G, and a blue light-transmitting resin layer 114B,respectively, and can transmit and detect light of the colors of thelight-transmitting resin layers 114R, 114G, and 114B.

In the semiconductor integrated circuit 112R, the semiconductorintegrated circuit 112G, and the semiconductor integrated circuit 112B,conductive layers are provided for the terminal electrodes 115 aR, 115bR, 115 aG, 115 bG, 115 aB, and 115 bB for electrical connection at thetime of mounting on surfaces of the semiconductor integrated circuits.

The terminal electrodes 115 aR, 115 bR, 115 aG, 115 bG, 115 aB, and 115bB may be formed using conductive resins by a wet process or may beformed using conductive thin films by a dry process. Alternatively, aconductive resin layer and a conductive thin film may be stacked.

For example, in the case of forming the conductive layer by a screenprinting method, the conductive layer can be formed by selectivelyprinting a conductive paste in which conductive particles each having aparticle size of several nanometers to several tens micrometers aredissolved or dispersed in an organic resin. As the conductive particles,metal particles of one or more of silver (Ag), gold (Au), copper (Cu),nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum(Mo), titanium (Ti), and the like or fine particles of silver halide canbe used. Further, as the organic resin contained in the conductivepaste, one or more selected from organic resins functioning as a binderof metal particles, a solvent, a dispersing agent, and a coatingmaterial can be used. Typically, an organic resin such as an epoxy resinand a silicone resin can be given. Further, in forming the conductivelayer, it is preferable to bake the conductive paste after beingprovided. Alternatively, fine particles containing solder or lead-freesolder may be used.

The semiconductor integrated circuit 112R, the semiconductor integratedcircuit 112G, and the semiconductor integrated circuit 112B are bondedto the structure body 160 in which the fibrous body 161 is impregnatedwith the organic resin 162, which has openings 163R, 163G, and 163B (seeFIG. 4B).

Further, before the semiconductor integrated circuits are bonded to thestructure body in which a fibrous body is impregnated with an organicresin, an inspection step may be performed on the semiconductorintegrated circuits. A semiconductor device can be formed by bonding aconforming product selected through the inspection step to the structurebody in which a fibrous body is impregnated with an organic resin.

The structural body is heated and subjected to pressure bonding so thatthe organic resin of the structure body is plasticized or cured. Notethat in the case where the organic resin is an organic plastic resin,the organic resin which has been plasticized is cured by being cooled toa room temperature. By heating and pressure bonding, the organic resinis uniformly spread so as to be in close contact with a semiconductorintegrated circuit and is cured. A step in which the structure body issubjected to pressure bonding is performed under an atmospheric pressureor a reduced pressure. The organic resin may be a photocurable resin andis irradiated with light to be bonded to the structure body after beingin close contact with the semiconductor integrated circuit.

A thermosetting resin such as an epoxy resin, an unsaturated polyesterresin, a polyimide resin, a bismaleimide-triazine resin, or a cyanateresin can be used as the organic resin 162. Alternatively, athermoplastic resin such as a polyphenylene oxide resin, apolyetherimide resin, or a fluorine resin can be used as the organicresin 162. Still alternatively, a plurality of resins selected from theabove thermosetting resins and thermoplastic resins may be used as theorganic resin 162. By using the above organic resin, the fibrous bodycan be bonded to the semiconductor integrated circuits 112R, 112G, and112B by heat treatment or light irradiation treatment. The higher theglass transition temperature of the organic resin 162 is, the lesseasily the organic resin 162 is damaged by local pressure, which ispreferable.

Highly thermally-conductive filler may be dispersed in the organic resin162 or yarn bundles of fibers. As the highly thermally-conductivefiller, aluminum nitride, boron nitride, silicon nitride, alumina, orthe like can be given. As the highly thermally-conductive filler, ametal particle such as silver or copper can also be given. In the casewhere the highly thermally-conductive filler is included in the organicresin or the yarn bundles of fibers, heat generated in the semiconductorintegrated circuits 112R, 112G, and 112B can be easily released to theoutside. Accordingly, thermal storage in the semiconductor device can besuppressed and thus the semiconductor device can be prevented from beingdamaged.

The fibrous body 161 is a woven or nonwoven fabric using high-strengthfibers of an organic compound or an inorganic compound and provided soas to overlap part of the semiconductor integrated circuits 112R, 112G,and 112B. The high-strength fiber is specifically a fiber with a highmodulus of elasticity in tension or a fiber with a high Young's modulus.As typical examples of a high-strength fiber, a polyvinyl alcohol fiber,a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramidfiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and acarbon fiber can be given. As a glass fiber, a glass fiber using Eglass, S glass, D glass, Q glass, or the like can be given. Note thatthe fibrous body 161 may be formed from one kind of the abovehigh-strength fibers or a plurality of the above high-strength fibers.

The fibrous body 161 may be a woven fabric which is woven using bundlesof fibers (single yarns) (hereinafter the bundles of fibers are referredto as yarn bundles) for warp yarns and weft yarns, or a nonwoven fabricobtained by stacking yarn bundles of plural kinds of fibers randomly orin one direction. In the case of a woven fabric, a plain-woven fabric, atwilled fabric, a satin-woven fabric, or the like can be used asappropriate.

The yarn bundle may have a circular shape or an elliptical shape incross section. As the yarn bundle of fibers, a yarn bundle of fibers maybe used which has been subjected to fiber opening with a high-pressurewater stream, high-frequency vibration using liquid as a medium,continuous ultrasonic vibration, pressing with a roller, or the like. Ayarn bundle of fibers which is subjected to fabric opening has a largewidth, has a smaller number of single yarns in the thickness direction,and has an elliptical shape or a flat shape in cross section. Further,by using a loosely twisted yarn for the yarn bundle of fibers, the yarnbundle is easily flattened and has an elliptical shape or a flat shapein cross section. Using a yarn bundle having an elliptical shape or aflat shape in cross section in this manner can reduce the thickness ofthe fibrous body 161. Accordingly, the thickness of the structure body160 can be reduced and thus a thin semiconductor device can bemanufactured.

Note that in drawings of this embodiment, the fibrous body 161 isillustrated as a woven fabric which is plain-woven using a yarn bundlehaving an elliptical shape in cross section.

Further, in order to enhance permeability of an organic resin into theinside of the yarn bundle of fibers, the fiber may be subjected tosurface treatment. For example, as the surface treatment, coronadischarge treatment, plasma discharge treatment, or the like foractivating a surface of the fiber can be given. Further, surfacetreatment using a silane coupling agent or a titanate coupling agent canbe given.

The semiconductor device including a plurality of semiconductorintegrated circuits can be mounted on a different substrate with solderor an anisotropic conductive layer.

Further, as for the structure of a connecting portion of thesemiconductor device and an electrode of the different substrate onwhich the semiconductor device is mounted, a wiring over the substratemay be brought into contact with a bump which is a conductive projectionprovided on a terminal electrode of the semiconductor integrated circuitand the different substrate on which the semiconductor device is mountedand the semiconductor integrated circuit may be bonded with a resin.Alternatively, by providing a resin in which conductive particles aredispersed, between the electrode of the different substrate on which thesemiconductor integrated circuit is mounted and the terminal electrodeof the semiconductor integrated circuit, the electrode of the differentsubstrate on which the semiconductor integrated circuit is mounted andthe terminal electrode of the semiconductor integrated circuit may beconnected and bonded to be fixed with an organic resin in whichconductive particles are dispersed. Further, as the resin used forbonding, a photocurable resin, a thermosetting resin, a resin which isnaturally cured, or the like can be used.

Note that it is preferable to provide a resin to bond the semiconductordevice and the different substrate on which the semiconductor device ismounted because bond strength is increased.

Further, as described in this embodiment, since in the semiconductorintegrated circuit, a light-transmitting resin layer is not exposed tothe semiconductor integrated circuit portion side, the semiconductorintegrated circuit has high heat resistance. Therefore, defects due toheat treatment in mounting the semiconductor integrated circuit on thedifferent substrate with a solder or an anisotropic conductive layer canbe prevented from being generated.

Being covered with the light-transmitting resin layer, a thinlight-transmitting substrate formed in the semiconductor integratedcircuit is easily handled in the process and is not easily damaged forexample. Therefore, a semiconductor integrated circuit and asemiconductor device with higher performance and smaller thickness canbe manufactured with high yield.

Since the plurality of semiconductor integrated circuits which aremounted on the structure body in which a fibrous body is impregnatedwith an organic resin can be freely selected, the semiconductorintegrated circuits including chromatic color light-transmitting resinsof different colors so that a semiconductor device includingsemiconductor integrated circuits of a plurality of colors, each ofwhich has a function of a color sensor, can be manufactured.

Further, a semiconductor integrated circuit can be subjected to aninspection step before being bonded to a structure body in which afibrous body is impregnated with an organic resin, so that only aconforming product can be selected and bonded to the structure body inwhich a fibrous body is impregnated with an organic resin. Thus, yieldof a semiconductor device is increased in a manufacturing process.Particularly in the case of a structure in which the semiconductorintegrated circuit includes a semiconductor integrated circuit portionincluding a complicated structure such as an amplifier circuit, sincethere is a possibility that defects are generated in the semiconductorintegrated circuit having a chip form, it is effective that thesemiconductor integrated circuit can be inspected for defects beforebeing bonded to the structure body in which a fibrous body isimpregnated with an organic resin.

Further, a semiconductor integrated circuit of the present invention hasa structure in which at least a chromatic color light-transmitting resincovers a surface of a light-transmitting substrate, which is the reverseof the surface on which a semiconductor integrated circuit portion isformed and a part of an end portion (side surface) of thelight-transmitting substrate. Thus, the light-transmitting resin layeralso functions as a shock absorbing layer which absorbs external stresssuch as pressure which is applied in the manufacturing step or in theinspection step, so that defects such as a scratch and a crack of asemiconductor integrated circuit can be reduced, and a semiconductordevice with high reliability can be manufactured.

A method for forming a photoelectric conversion element and a fieldeffect transistor over a substrate for a semiconductor integratedcircuit portion obtained by division is described with reference tocross-sectional views in FIGS. 5A to 5D, FIGS. 6A to 6C, and FIGS. 7Aand 7B. In FIG. 7A, AN 100 which is one of glass substrates is used asthe light-transmitting substrate 310. A thin film transistor is used asa field effect transistor formed over the substrate so that aphotoelectric conversion element and a thin film transistor can beformed over the substrate in the same process; therefore, there is anadvantage that mass production of semiconductor integrated circuits iseasy. Note that in an embodiment of the present invention, thephotoelectric conversion element is irradiated with light transmittedthrough the light-transmitting resin layer which functions as a colorfilter and the light-transmitting substrate.

First, a silicon oxide film containing nitrogen (with a thickness of 100nm) to be the base insulating film 312 is formed by a plasma CVD method,and a semiconductor film such as an amorphous silicon film containinghydrogen (with a thickness of 54 nm) is stacked over the base insulatingfilm 312 without being exposed to the atmosphere. The base insulatingfilm 312 may be formed by stacking a silicon oxide film, a siliconnitride film, and a silicon oxide film containing nitrogen. For example,the base insulating film 312 may be formed by stacking a silicon nitridefilm containing oxygen with a thickness of 50 nm and a silicon oxidefilm containing nitrogen with a thickness of 100 nm. Note that thesilicon oxide film containing nitrogen or the silicon nitride filmfunctions as a blocking layer which prevents diffusion of impuritiessuch as alkali metal from a glass substrate.

The semiconductor layer included in a semiconductor element can beformed using the following material: an amorphous semiconductormanufactured by or a sputtering method or a vapor-phase growth methodusing a semiconductor material gas typified by silane or germane; apolycrystalline semiconductor formed by crystallizing the amorphoussemiconductor with the use of light energy or thermal energy; amicrocrystalline (also referred to as semiamorphous or microcrystal)semiconductor; or the like. The semiconductor layer can be formed by asputtering method, an LPCVD method, a plasma CVD method, or the like.

The microcrystalline semiconductor film belongs to a metastable statewhich is intermediate between an amorphous state and a single crystalstate when Gibbs free energy is considered. That is, themicrocrystalline semiconductor film is a semiconductor having a thirdstate which is stable in terms of free energy and has a short rangeorder and lattice distortion. Columnar-like or needle-like crystals growin a normal direction with respect to a substrate surface. The Ramanspectrum of microcrystalline silicon, which is a typical example of amicrocrystalline semiconductor, is shifted to a lower wavenumber than520 cm⁻¹ which represents a peak of the Raman spectrum of single crystalsilicon. That is to say, a peak of a Raman spectrum of microcrystallinesilicon lies between 520 cm⁻¹ and 480 cm⁻¹ which represent that ofsingle crystal silicon and that of amorphous silicon, respectively. Themicrocrystalline semiconductor film contains hydrogen or halogen of atleast 1 at. % to terminate dangling bonds. Further, a rare gas elementsuch as helium, argon, krypton, or neon may be contained to furtherpromote lattice distortion, so that stability is enhanced and afavorable microcrystalline semiconductor film can be obtained.

The microcrystalline semiconductor film can be formed by ahigh-frequency plasma CVD method with a frequency of several tens of MHzto several hundred MHz or a microwave plasma CVD apparatus with afrequency of 1 GHz or more. The microcrystalline semiconductor film canbe typically formed using silicon hydride such as SiH₄, Si₂H₆, SiH₂Cl₂,SiHCl₃, SiCl₄, or SiF₄ which is diluted with hydrogen. Alternatively,with a dilution with one or plural kinds of rare gas elements selectedfrom helium, argon, krypton, and neon in addition to silicon hydride andhydrogen, the microcrystalline semiconductor film can be formed. In thatcase, the flow ratio of hydrogen to silicon hydride is set to be 5:1 to200:1, preferably, 50:1 to 150:1, more preferably, 100:1.

Hydrogenated amorphous silicon may be typically used as an amorphoussemiconductor, while polysilicon and the like may be typically used as acrystalline semiconductor. As examples of polysilicon (polycrystallinesilicon), so-called high-temperature polysilicon which containspolysilicon as a main component and is formed at a process temperatureof 800° C. or more, so-called low-temperature polysilicon that containspolysilicon as a main component and is formed at a process temperatureof 600° C. or less, polysilicon obtained by crystallizing amorphoussilicon by using an element promoting crystallization or the like, andthe like are given. It is needles to say that as mentioned above, amicrocrystalline semiconductor or a semiconductor containing a crystalphase in part of a semiconductor layer may be used.

As a material of the semiconductor, as well as an element of silicon(Si), germanium (Ge), or the like, a compound semiconductor such asGaAs, InP, SiC, ZnSe, GaN, or SiGe can be used. Alternatively, ZnO, SnO,or the like which is an oxide semiconductor may be used. In the case ofusing ZnO for a semiconductor layer, a gate insulating layer ispreferably formed using yttrium oxide, aluminum oxide, titanium oxide,or a stack of any of the above. For a gate electrode layer, a sourceelectrode layer, and a drain electrode layer, ITO, gold, titanium, orthe like is preferably used. Alternatively, ZnO to which indium,gallium, or the like is added may be used.

In the case of using a crystalline semiconductor film for thesemiconductor layer, the crystalline semiconductor film may be formed byany of various methods (such as a laser crystallization method, athermal crystallization method, and a thermal crystallization methodusing an element promoting crystallization, such as nickel). Further, amicrocrystalline semiconductor may be crystallized by laser irradiationto enhance crystallinity. In the case where the element promotingcrystallization is not introduced, hydrogen is released from anamorphous silicon film by heat treatment before irradiating theamorphous silicon film with a laser beam. For example, hydrogen isreleased until the concentration of hydrogen contained in the amorphoussilicon film becomes 1×10²⁰ atoms/cm³ or less by heating the amorphoussilicon film at a temperature of 500° C. for one hour in a nitrogenatmosphere. This is because the amorphous silicon film containing a highamount of hydrogen is destroyed when being irradiated with a laser beam.

A method for introducing the element promoting crystallization into theamorphous semiconductor layer is not particularly limited as long as itis capable of introducing the element promoting crystallization to asurface of or inside the amorphous semiconductor film. For example, asputtering method, a CVD method, a plasma treatment method (including aplasma CVD method), an adsorption method, or a method for applying asolution of metal salt can be used. Among them, a method of using asolution is simple and advantageous in that the concentration of theelement promoting crystallization can be easily controlled. At thistime, it is desirable to form an oxide film by ultraviolet irradiationin an oxygen atmosphere, a thermal oxidation method, treatment witheither ozone water containing hydroxyl radicals or hydrogen peroxide, orthe like to improve wettability of the surface of the amorphoussemiconductor film so that an aqueous solution is diffused on the entiresurface of the amorphous semiconductor film.

In a crystallization step in which an amorphous semiconductor film iscrystallized to form a crystalline semiconductor film, an elementpromoting crystallization may be added to the amorphous semiconductorfilm and crystallization may be performed by heat treatment (at 550 to750° C. for 3 minutes to 24 hours). The element promotingcrystallization can be one or more of metal elements such as iron (Fe),nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd),osmium (Os), iridium (Ir), platinum (Pt), copper (Cu), and gold (Au).

In order to remove or reduce the element promoting crystallization fromthe crystalline semiconductor film, a semiconductor film containing animpurity element is formed in contact with the crystalline semiconductorfilm and is made to function as a gettering sink. As the impurityelement, an impurity element imparting n-type conductivity, an impurityelement imparting p-type conductivity, a rare gas element, or the likecan be used; for example, one or more of phosphorus (P), nitrogen (N),arsenic (As), antimony (Sb), bismuth (Bi), boron (B), helium (He), neon(Ne), argon (Ar), krypton (Kr), and xenon (Xe) can be used. Asemiconductor film containing a rare gas element is formed in contactwith the crystalline semiconductor film containing the element promotingcrystallization, and heat treatment (at 550 to 750° C. for 3 minutes to24 hours) is performed. The element promoting crystallization, which iscontained in the crystalline semiconductor film, moves into thesemiconductor film containing a rare gas element and thus, the elementpromoting crystallization, which is contained in the crystallinesemiconductor film, is removed or reduced. After that, the semiconductorfilm containing a rare gas element, which has served as a getteringsink, is removed.

An amorphous semiconductor film may be crystallized by the combinationof heat treatment and laser beam irradiation, or one of heat treatmentand laser beam irradiation may be performed a plurality of times.

A crystalline semiconductor film may be formed on a substrate directlyby a plasma method. Alternatively, the crystalline semiconductor filmmay be selectively formed over a substrate by a plasma method.

In this embodiment, a polycrystalline silicon film is obtained by acrystallization method using a catalytic element as a semiconductorfilm. A nickel acetate solution containing nickel of 10 ppm by weight isadded by a spinner. Note that a nickel element may be dispersed over theentire surface by a sputtering method instead of a method of adding thesolution. Then, heat treatment is performed for crystallization to forma semiconductor film (here, a polycrystalline silicon film) having acrystalline structure. Here, a polycrystalline silicon film is obtainedby heat treatment for crystallization (at 550° C. for four hours) afterthe heat treatment (at 500° C. for one hour).

Next, an oxide film over the surface of the polycrystalline silicon filmis removed by a dilute hydrofluoric acid or the like. After that, inorder to increase a crystallization rate and repair defects left incrystal grains, irradiation with a laser beam (XeCl: wavelength of 308nm) is performed in the atmosphere or an oxygen atmosphere.

As the laser beam, an excimer laser beam with a wavelength of 400 nm orless; or a second harmonic or a third harmonic of a YAG laser is used.Here, the surface of the silicon film may be scanned as follows: apulsed laser beam with a repetition rate of approximately 10 to 1000 Hzis used, the pulsed laser beam is condensed to 100 to 500 mJ/cm² by anoptical system, and irradiation is performed with an overlap rate of 90to 95%. In this embodiment, irradiation with a laser beam with arepetition rate of 30 Hz and energy density of 470 mJ/cm² is performedin the atmosphere.

Note that since laser beam irradiation is performed in the atmosphere orin an oxygen atmosphere, an oxide film is formed over the surface by thelaser beam irradiation. Note that although an example in which thepulsed laser is used is described in this embodiment, a continuous wavelaser may alternatively be used. In order to obtain a crystal with alarge grain size at the time of crystallization of a semiconductor film,it is preferable to use a solid laser which is capable of continuousoscillation and to apply the second to fourth harmonic of a fundamentalwave. Typically, a second harmonic (532 nm) or a third harmonic (355 nm)of an Nd:YVO₄ laser (a fundamental wave of 1064 nm) may be applied.

In the case of using a continuous wave laser, a laser beam which isemitted from a continuous wave YVO₄ laser of which output is 10 W isconverted into a harmonic by a non-linear optical element.Alternatively, there is a method by which YVO₄ crystal and a non-linearoptical element are put in a resonator and a high harmonic is emitted.Then, the laser beam having a rectangular shape or an elliptical shapeon an irradiated surface is preferably formed by an optical system to beemitted to an object to be processed. At this time, a power density ofapproximately 0.01 to 100 MW/cm² (preferably, 0.1 to 10 MW/cm²) isnecessary. Then, the semiconductor film may be moved at a rate ofapproximately 10 to 2000 cm/s relatively to the laser beam so as to beirradiated.

Subsequently, in addition to the oxide film which is formed by the laserbeam irradiation, a barrier layer formed of an oxide film having athickness of 1 to 5 nm in total is formed by treatment of the surfacewith ozone water for 120 seconds. The barrier layer is formed in orderto remove the element which is added for crystallization, for example,nickel (Ni), from the film. Although the barrier layer is formed usingozone water here, the barrier layer may be formed by depositing an oxidefilm having a thickness of approximately 1 to 10 nm by a method ofoxidizing a surface of the semiconductor film having a crystallinestructure by ultraviolet irradiation in an oxygen atmosphere; a methodof oxidizing a surface of the semiconductor film having a crystallinestructure by oxygen plasma treatment; a plasma CVD method; a sputteringmethod; an evaporation method; or the like. Note that the oxide filmformed by the laser beam irradiation may be removed before formation ofthe barrier layer.

Then, an amorphous silicon film containing an argon element, whichserves as a gettering site, is formed to a thickness of 10 to 400 nm,here 100 nm, over the barrier layer by a sputtering method. Here, theamorphous silicon film containing an argon element is formed under anatmosphere containing argon with the use of a silicon target. In thecase where the amorphous silicon film containing an argon element isformed by a plasma CVD method, deposition conditions are as follows: aflow ratio of monosilane to argon (SiH₄:Ar) is 1:99, deposition pressureis set to 6.665 Pa, RF power density is set to 0.087 W/cm², anddeposition temperature is set to 350° C.

After that, heat treatment in a furnace heated at 650° C. is performedfor 3 minutes to remove the catalytic element (gettering). Accordingly,the concentration of the catalytic element in the semiconductor filmhaving a crystalline structure is reduced. A lamp annealing apparatusmay be used instead of the furnace.

Next, the amorphous silicon film containing an argon element, which is agettering site, is selectively removed using the barrier layer as anetching stopper, and subsequently, the barrier layer is selectivelyremoved with a diluted hydrofluoric acid. Note that nickel is likely tomove to a region having high oxygen concentration at the time ofgettering; therefore, it is preferable that the barrier layer formed ofan oxide film be removed after gettering.

In the case where crystallization of the semiconductor film with the useof an element promoting crystallization is not performed, the abovesteps such as the step of forming the barrier layer, the step of formingthe gettering site, the step of performing heat treatment for gettering,the step of removing the gettering site, and the step of removing thebarrier layer are not necessary.

Next, a thin oxide film is formed on the surface of the obtainedsemiconductor film having a crystalline structure (for example, acrystalline silicon film) with ozone water, and subsequently, a mask isformed of a resist using a first photomask and the semiconductor film isetched to have a desired shape, so that an island-shaped semiconductorlayer 331 is formed (see FIG. 5A). After the island-shaped semiconductorlayer 331 is formed, a mask formed of a resist is removed.

Next, a very small amount of an impurity element (boron or phosphorus)is added in order to control a threshold voltage of a transistor, ifnecessary. Here, an ion doping method is used, in which diborane (B₂H₆)is not separated by mass but excited by plasma.

Next, the oxide film is removed with an etchant containing ahydrofluoric acid, and at the same time, the surface of thesemiconductor layer 331 is washed. After that, an insulating film to bea gate insulating film 313 is formed.

The gate insulating film 313 may be formed using silicon oxide or may beformed to have a layered structure of silicon oxide and silicon nitride.The gate insulating film 313 may be formed by depositing an insulatingfilm by a plasma CVD method or a low pressure CVD method or may beformed by solid phase oxidation or solid phase nitridation by plasmatreatment. This is because a gate insulating film which is formed usinga semiconductor layer which is oxidized or nitrided by plasma treatmentis dense, has high withstand voltage, and is excellent in reliability.For example, a surface of the semiconductor layer is oxidized ornitrided using nitrous oxide (N₂O) diluted with Ar by 1 to 3 times (flowratio) by application of a microwave (2.45 GHz) power of 3 to 5 kW at apressure of 10 to 30 Pa. By this treatment, an insulating film with athickness of 1 to 10 nm (preferably, 2 to 6 nm) is formed. Further,nitrous oxide (N₂O) and silane (SiH₄) are introduced and electric powerof microwaves (2.45 GHz) of 3 to 5 kW is applied to the insulating filmat a pressure of 10 to 30 Pa to form a silicon oxynitride film by avapor-phase growth method, which is to be a gate insulating film. With acombination of a solid-phase reaction and a reaction by a vapor-phasegrowth method, the gate insulating film with low interface state densityand an excellent withstand voltage can be formed.

As the gate insulating film 313, a high dielectric constant materialsuch as zirconium dioxide, hafnium oxide, titanium dioxide, or tantalumpentoxide may be used. By using a high dielectric constant material forthe gate insulating film 313, a gate leakage current can be reduced.

In this embodiment, as the gate insulating film 313, a silicon oxidefilm containing nitrogen is formed to a thickness of 115 nm by a plasmaCVD method.

Next, after a metal film is formed over the gate insulating film 313, agate electrode 334, wirings 314 and 315, and a terminal electrode 350are formed using a second photomask (see FIG. 5B). As the metal film,for example, a film is used, in which tantalum nitride and tungsten (W)are stacked to be 30 nm and 370 nm, respectively.

Note that, as the gate electrode 334, the wirings 314 and 315, and theterminal electrode 350, instead of the above film, a single-layer filmformed using an element selected from titanium (Ti), tungsten (W),tantalum (Ta), molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium(Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium(Os), iridium (Ir), platinum (Pt), aluminum (Al), gold (Au), silver(Ag), and copper (Cu), or an alloy material or a compound materialcontaining any of the above elements as its main component; asingle-layer film formed using nitride thereof, for example, titaniumnitride, tungsten nitride, tantalum nitride or molybdenum nitride may beused.

Note that, as the gate electrodes 334, the wirings 314 and 315, and theterminal electrode 350, a light-transmitting material which transmitsvisible light may be used. As a light-transmitting conductive material,indium tin oxide (ITO), indium tin oxide containing silicon oxide(ITSO), organic indium, organic tin, zinc oxide, or the like can beused. Alternatively, indium zinc oxide (IZO) containing zinc oxide(ZnO), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO2),indium oxide containing tungsten oxide, indium zinc oxide containingtungsten oxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, or the like may be used.

Next, an impurity imparting one conductivity type is introduced into thesemiconductor layer 331 to form a source and drain regions 337 of atransistor 373 (see FIG. 5C). In this embodiment, an n-channeltransistor is formed; therefore, an impurity imparting n-typeconductivity, for example, phosphorus (P) or arsenic (As) is introducedinto the semiconductor layer 331. In the case where a p-channeltransistor is formed, an impurity imparting p-type conductivity, forexample, boron (B) may be introduced into the semiconductor layer 331.

Next, a first interlayer insulating film (not shown) including a siliconoxide film is formed to a thickness of 50 nm by a CVD method, and afterthat, a step of activating the impurity element added to thesemiconductor layer 331 is performed. This activation process isperformed by a rapid thermal annealing method (RTA method) using a lamplight source; an irradiation method with a YAG laser or an excimer laserfrom the back side; heat treatment using a furnace; or a method which isa combination of any of the above methods.

Then, a second interlayer insulating film 316 including a siliconnitride film containing hydrogen and oxygen is formed, for example, to athickness of 10 nm.

Next, a third interlayer insulating film 317 formed using an insulatingmaterial is formed over the second interlayer insulating film 316 (seeFIG. 5D). An insulating film obtained by a CVD method can be used as thethird interlayer insulating film 317. In this embodiment, in order toimprove adhesion, a silicon oxide film containing nitrogen is formed toa thickness of 900 nm as the third interlayer insulating film 317.

Then, heat treatment (heat treatment at 300 to 550° C. for 1 to 12hours, for example, at 410° C. for an hour in a nitrogen atmosphere) isperformed to hydrogenate the island-shaped semiconductor layer. Thisstep is performed to terminate a dangling bond of the semiconductorlayer by hydrogen contained in the second interlayer insulating film316. The semiconductor layer can be hydrogenated regardless of whetheror not the gate insulating film 313 is formed.

Note that as the third interlayer insulating film 317, an insulatingfilm using siloxane or a layered structure thereof may be used. Siloxaneis composed of a skeleton structure of a bond of silicon (Si) and oxygen(O). A compound containing at least hydrogen (such as an alkyl group oran aryl group) is used as a substituent. Fluorine may be contained inthe compound.

In the case where an insulating film using siloxane or a layeredstructure thereof is used as the third interlayer insulating film 317,after formation of the second interlayer insulating film 316, heattreatment to hydrogenate the semiconductor layer may be performed, andthen, the third interlayer insulating film 317 may be formed.

Next, a mask is formed of a resist by using a third photomask, and thefirst interlayer insulating film, the second interlayer insulating film316, the third interlayer insulating film 317, or the gate insulatingfilm 313 are selectively etched to form a contact hole. Then, the maskformed of a resist is removed.

Note that the third interlayer insulating film 317 may be formed ifnecessary. In the case where the third interlayer insulating film 317 isnot formed, the first interlayer insulating film, the second interlayerinsulating film 316, and the gate insulating film 313 are selectivelyetched after formation of the second interlayer insulating film 316 toform a contact hole.

Next, after formation of a metal layered film by a sputtering method, amask is formed of a resist by using a fourth photomask, and then, themetal film is selectively etched to form a wiring 319, a connectionelectrode 320, a terminal electrode 351, a source and drain electrodes341 of the transistor 373. Then, the mask formed of a resist is removed.Note that the metal film of this embodiment is a layered film in which aTi film with a thickness of 100 nm, an Al film containing a very smallamount of Si with a thickness of 350 nm, and a Ti film with a thicknessof 100 nm are stacked.

In the case where each of the wiring 319, the connection electrode 320,the terminal electrode 351, and the source and drain electrodes 341 ofthe transistor 373 is formed using a single-layer conductive film, atitanium film (Ti film) is preferable in terms of heat resistance,conductivity, and the like. Instead of a titanium film, a single-layerfilm formed using an element selected from tungsten (W), tantalum (Ta),molybdenum (Mo), neodymium (Nd), cobalt (Co), zirconium (Zr), zinc (Zn),ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir),and platinum (Pt), or an alloy material or a compound materialcontaining any of the above elements as its main component; asingle-layer film formed using nitride thereof, for example, titaniumnitride, tungsten nitride, tantalum nitride, or molybdenum nitride maybe used. The number of times of deposition can be reduced in themanufacturing process by forming each of the wiring 319, the connectionelectrode 320, the terminal electrode 351, and the source and drainelectrodes 341 of the transistor 373 as a single-layer film.

The top gate transistor 373 using a polycrystalline silicon film as thesemiconductor layer can be manufactured through the process describedabove.

Although an n-channel transistor is used as a semiconductor elementincluded in the semiconductor integrated circuit portion in thisembodiment, a p-channel transistor may alternatively be used. Any of avariety of types of field effect transistors can be employed, and thereis no limitation on an applicable type of the transistor.

Although a transistor having a single-gate structure is described inthis embodiment, a transistor having a multi-gate structure such as adouble-gate structure may alternatively be employed. In this case, gateelectrode layers may be provided above and below the semiconductor layeror a plurality of gate electrode layers may be provided only on one sideof (above or below) the semiconductor layer.

Alternatively, a transistor or the like formed by using an inkjet methodor a printing method may be used. Accordingly, transistors can be formedat room temperature, can be formed at a low vacuum, or can be formedusing a large substrate. Further, since the transistor can be formedwithout using a mask (reticle), a layout of the transistor can bechanged easily. Further, since it is not necessary to use a resist, thematerial cost is reduced and the number of steps can be reduced.Further, since a film is formed only at a necessary portion, a materialis not wasted compared with a manufacturing method in which etching isperformed after a film is formed over the entire surface, so that thecost can be reduced.

Alternatively, a transistor or the like including an organicsemiconductor or a carbon nanotube may be used. Such a transistor can beformed over a substrate which can be bent. Therefore, such a transistorcan resist a shock.

Alternatively, a transistor may be formed using a light-transmitting SOIsubstrate, or the like using a single crystal semiconductor layer as asemiconductor layer. Thus, transistors can be formed with almost novariations in characteristics, sizes, shapes, or the like, with highcurrent supply capability, and with small sizes. By using such atransistor, power consumption of a circuit can be reduced or highintegration of a circuit can be achieved.

By forming a field effect transistor using a thin film transistor, thesemiconductor device of this embodiment can be formed over alight-transmitting substrate such as a glass substrate. Therefore, evenin the case where the photoelectric conversion element is formed over asubstrate, the photoelectric conversion element can receive lighttransmitted through the substrate from a back surface thereof.

Subsequently, a conductive metal film (titanium (Ti), molybdenum (Mo),or the like) which is not likely to react with a photoelectricconversion layer (typically, amorphous silicon) formed later and thusdoes not easily become an alloy is formed. Then, a mask formed of aresist is formed using the fifth photomask, and a protective electrode318 which covers the wiring 319, a protective electrode 345, aprotective electrode 346, and a protective electrode 348 are formed byselectively etching the conductive metal film (FIG. 6A). Here, a Ti filmhaving a thickness of 200 nm obtained by a sputtering method is used.Note that the connection electrode 320, the terminal electrode 351, andthe source and drain electrodes 341 of the transistor 373 are alsocovered with the conductive metal film. Thus, the conductive metal filmalso covers a side surface of the substrate where the Al film which isthe second layer in these electrodes is exposed; therefore, theconductive metal film can also prevent diffusion of aluminum atoms tothe photoelectric conversion layer.

Note that in the case where each of the wiring 319, the connectionelectrode 320, the terminal electrode 351, and the source and drainelectrodes 341 of the transistor 373 are formed using a single-layerconductive film, the protective electrodes 318, 345, 346, and 348 arenot necessarily formed.

Next, a photoelectric conversion layer 371 including a p-typesemiconductor layer 371 p, an i-type semiconductor layer 371 i, and ann-type semiconductor layer 371 n is formed over the third interlayerinsulating film 317.

The p-type semiconductor layer 371 p may be formed by depositing asemi-amorphous silicon film (also referred to as a microcrystallinesilicon film) containing an impurity element belonging to Group 13 ofthe periodic table, such as boron (B), by a plasma CVD method.

As one example of a method for forming a microcrystalline silicon film,a microcrystalline silicon film is formed by glow discharge plasma inthe mixed gas of a silane gas and hydrogen, or a silane gas, hydrogen,and a rare gas. Silane is diluted with hydrogen, a rare gas, or hydrogenand a rare gas by 10 to 2000 times. Therefore, a large amount ofhydrogen, a rare gas, or hydrogen and a rare gas is required. Atemperature for heating the substrate is 100 to 300° C., preferably 120to 220° C. It is preferable that deposition be performed at atemperature of 120 to 220° C. in order that a growing surface of themicrocrystalline silicon film may be inactivated with hydrogen andgrowth of microcrystalline silicon may be promoted. In the depositiontreatment, crystals of a SiH radical, a SiH₂ radical, and a SiH₃ radicalwhich are active species are grown from the crystal nuclei. Further, anenergy band width may be adjusted by mixing germanium hydride orgermanium fluoride such as GeH₄ or GeF₄ into a gas such as silane oradding carbon or germanium to silicon. In the case where carbon is addedto silicon, an energy band width is increased, and in the case wheregermanium is added to silicon, an energy band width is reduced.

Further, the wiring 319 and the protective electrode 318 are in contactwith the bottom layer of the photoelectric conversion layer 371, in thisembodiment, the p-type semiconductor layer 371 p.

After the p-type semiconductor layer 371 p is formed, the i-typesemiconductor layer 371 i and the n-type semiconductor layer 371 n aresequentially formed. Accordingly, the photoelectric conversion layer 371including the p-type semiconductor layer 371 p, the i-type semiconductorlayer 371 i, and the n-type semiconductor layer 371 n is formed.

As the i-type semiconductor layer 371 i, for example, a microcrystallinesilicon film may be formed by a plasma CVD method. Note that as then-type semiconductor layer 371 n, a microcrystalline silicon filmcontaining an impurity element belonging to Group 15 of the periodictable, for example, phosphorus (P) may be formed, or after formation ofa microcrystalline silicon film, an impurity element belonging to Group15 of the periodic table may be introduced.

As the p-type semiconductor layer 371 p, the i-type semiconductor layer371 i, and the n-type semiconductor layer 371 n, an amorphoussemiconductor film may be used instead of a microcrystallinesemiconductor film. Alternatively, a polycrystalline semiconductor filmformed using the above catalyst or the above laser crystallizationprocess may be used.

Alternatively, single crystal silicon formed by Smart Cut (registeredtrademark) method may be used.

Next, a sealing layer 324 is formed using an insulating material (forexample, an inorganic insulating film containing silicon) to a thicknessof 1 to 30 μm over the entire surface to obtain a state shown in FIG.6B. Here, as an insulating material film, a silicon oxide filmcontaining nitrogen with a thickness of 1 μm is formed by a CVD method.By using an insulating film formed by a CVD method, improvement inadhesion can be achieved.

Next, after the sealing layer 324 is etched to form openings, wirings374 and 375 are formed by a sputtering method. The wirings 374 and 375are titanium films (Ti films) (200 nm) which are obtained by asputtering method.

Next, a protective film 377 is formed to cover an exposed surface. Asthe protective film 377, a silicon nitride film is used in thisembodiment. The protective film 377 makes it possible to preventimpurities such as moisture and an organic substance from entering thetransistor 373 and the photoelectric conversion layer 371.

Next, a sealing film 378 is formed over the protective film 377. Thesealing film 378 also functions of protecting a semiconductor integratedcircuit portion from external stress. In this embodiment, the sealingfilm 378 is formed to a thickness of 20 μm with a photosensitiveepoxy-phenol-based resin. Ohmcoat 1012B (manufactured by NamicsCorporation) which is a photosensitive epoxy-phenol-based resin may beused for the sealing film 378.

Next, part of the protective film in a region where the terminalelectrode in an upper layer is electrically connected to the wiring 374or the wiring 375 in a lower layer is etched to form a contact hole.

Next, a stack of a titanium film (Ti film) (150 nm), a nickel film (Nifilm) (750 nm), and a gold film (Au film) (50 nm) are formed over thesealing film 378 using nickel (Ni) paste by a sputtering method, forexample. The adhesive strength of the terminal electrodes 115 a and 115b thus obtained exceeds 5 N, which is sufficient as adhesive strength ofa terminal electrode.

Through the steps described above, the terminal electrodes 115 a and 115b which can be connected by a solder are formed, and a structureillustrated in FIG. 7B can be obtained.

In practice, mass production of semiconductor integrated circuitportions each of which includes a photoelectric conversion element, atransistor, and the like, and which are formed at the time of FIG. 7B ispossible by formation of element materials over a large substrate. Alarge number of semiconductor integrated circuits (for example, 2 mm×1.5mm) including semiconductor integrated circuit portions can bemanufactured from one large substrate (for example, 600 cm×720 cm). Thestate is illustrated in FIGS. 8A and 8B.

In FIG. 8A, an element layer 151, the sealing film 378, and the terminalelectrodes 115 a and 115 b are formed over a light-transmittingsubstrate 100. The element layer 151 includes all structures formedbetween the light-transmitting substrate 100 and the sealing film 378 inFIG. 7A.

The light-transmitting substrate 100 is divided between the elementlayers 151 which are adjacent to each other, so that alight-transmitting substrate 109 having an element is formed.

A plurality of semiconductor integrated circuits including semiconductorintegrated circuit portions, which are thus formed, are bonded to astructure body in which a fibrous body is impregnated with an organicresin, so that a semiconductor device is manufactured.

Further, the semiconductor device can be mounted on a mounted substrate360 by solders 363 and 364 (see FIG. 7B). Note that the terminalelectrode 115 a is mounted on an electrode 361 on the mounted substrate360 by the solder 363, and the terminal electrode 115 b is mounted on anelectrode 362 by the solder 364. FIG. 7B illustrates one of theplurality of semiconductor integrated circuits bonded to a structurebody in which a fibrous body is impregnated with an organic resin.

In the photoelectric conversion element illustrated in FIG. 7B, lightwhich enters the photoelectric conversion layer 371 can be transmittedfrom the light-transmitting substrate 109 and the light-transmittingresin layers 110 and 114 side by using the light-transmitting substrate109 and the light-transmitting resin layers 110 and 114.

According to an embodiment of the present invention, a semiconductordevice may be provided in a housing which has an opening in an incidentregion where light is delivered to a photoelectric conversion element orwhich has a light-transmitting region formed using a light-transmittingmaterial. Since the photoelectric conversion element is made to detectlight transmitted through the chromatic color light-transmitting resinlayer, light from the external which is transmitted through a regionwhere the chromatic color light-transmitting resin layer is formed andenters the photoelectric conversion element can be blocked by coveringwith a housing, the region where the chromatic color light-transmittingresin layer is formed. Therefore, accuracy of the semiconductor deviceas a sensor is improved, and discrepancy can be reduced.

The semiconductor device is manufactured through the manufacturingprocess described above, and thus the semiconductor device can bemanufactured at low unit cost and with high yield.

Before dividing the light-transmitting substrate, the thickness of thelight-transmitting substrate is reduced, and the division is performedin two steps, so that wear of a cutting tool when a light-transmittingsubstrate is processed and divided can be reduced. Since the regionwhich is processed by the cutting tool is increased as the size of thelight-transmitting substrate is increased and as the size of each ofsemiconductor integrated circuits which are obtained by division isreduced, the cutting tool further wears out. Therefore, an embodiment ofthe present invention by which wearing out of the cutting tool can bereduced is particularly beneficial to a large substrate and a smallersemiconductor integrated circuit. Therefore, a semiconductor integratedcircuit and a semiconductor device can be manufactured at low cost. Thethickness of a semiconductor integrated circuit and a semiconductordevice can be reduced because thickness of the light-transmittingsubstrate is small.

Therefore, a highly reliable semiconductor device which is easilytreated though it is thin can be provided.

Embodiment 2

For a semiconductor device according to an embodiment of the presentinvention, any of a variety of forms of field effect transistors can beused as a semiconductor element included in a semiconductor integratedcircuit portion. In this embodiment, a field effect transistor includinga single crystal semiconductor layer is described in detail as asemiconductor element.

A method in which a single crystal semiconductor layer made from asingle crystal semiconductor substrate is provided over alight-transmitting substrate and a semiconductor element included in asemiconductor integrated circuit portion is formed is described belowwith reference to FIGS. 15A to 15D and FIGS. 16A to 16C.

A single crystal semiconductor substrate 1108 illustrated in FIG. 15A iscleaned, and is irradiated with ions accelerated by an electric field toa predetermined depth from the surface to form an embrittlement layer1110. Ion irradiation is performed in consideration of the thickness ofa single crystal semiconductor layer which is to be transferred to alight-transmitting substrate. An accelerating voltage in irradiation ofthe ions is set in consideration of such a thickness, and the singlecrystal semiconductor substrate 1108 is irradiated with the ions. In thepresent invention, a region which is embrittled by irradiating a singlecrystal semiconductor substrate with ions so that the region includesmicrovoids due to the ions is referred to as an embrittlement layer.

As the single crystal semiconductor substrate 1108, a commercial singlecrystal semiconductor substrate can be used. For example, a singlecrystal semiconductor substrate formed using a Group 4 element, such asa single crystal silicon substrate, a single crystal germaniumsubstrate, or a single crystal silicon germanium substrate can be used.Alternatively, a compound semiconductor substrate formed using galliumarsenide, indium phosphide, or the like may be used. As thesemiconductor substrate, a polycrystalline semiconductor substrate maybe used. It is needless to say that the single crystal semiconductorsubstrate is not limited to a circular wafer, and single crystalsemiconductor substrates with a variety of shapes can be used. Forexample, a polygonal substrate such as a rectangular substrate, apentagonal substrate, or a hexagonal substrate can be used. It is alsoneedless to say that a commercial circular single crystal semiconductorwafer can be used for the single crystal semiconductor substrate. As thecircular single crystal semiconductor wafer, a semiconductor wafer ofsilicon, germanium, or the like; a compound semiconductor wafer ofgallium arsenide, indium phosphide, or the like; or the like can beused. Typical examples of the single crystal semiconductor wafer arecircular single crystal silicon wafers which are 5 inches (125 mm) indiameter, 6 inches (150 mm) in diameter, 8 inches (200 mm) in diameter,12 inches (300 mm) in diameter, 400 mm in diameter, and 450 mm indiameter. Further, a rectangular single crystal semiconductor substratecan be formed by cutting a commercial circular single crystalsemiconductor wafer. The substrate can be cut with a cutting device suchas a dicer or a wire saw, laser cutting, plasma cutting, electron beamcutting, or any other appropriate cutting means. Alternatively, arectangular single crystal semiconductor substrate can be formed in sucha way that an ingot for manufacturing a semiconductor substrate beforebeing sliced into a substrate is processed into a rectangular solid soas to have a rectangular cross section and the rectangular solid ingotis sliced. Note that although there is no particular limitation on thethickness of the single crystal semiconductor substrate, a thick singlecrystal semiconductor substrate is preferable in consideration of reuseof the single crystal semiconductor substrate because many singlecrystal semiconductor layers can be formed from one piece of thickmaterial wafer. The thickness of single crystal silicon waferscirculating in the market conforms to SEMI standards, which specifythat, for example, a wafer with a diameter of 6 inches has a thicknessof 625 μm, a wafer with a diameter of 8 inches has a thickness of 725μm, and a wafer with a diameter of 12 inches has a thickness of 775 μm.Note that the thickness of a wafer conforming to SEMI standards includesa tolerance of +25 μm. It is needless to say that the thickness of thesingle crystal semiconductor substrate to be a material is not limitedto those of SEMI standards, and the thickness can be adjusted asappropriate when an ingot is sliced. It is also needless to say thatwhen the single crystal semiconductor substrate 1108 is reused, thethickness of the reused single crystal semiconductor substrate 1108 issmaller than the thickness specified by the SEMI standards. A singlecrystal semiconductor layer obtained over a light-transmitting substratecan be determined by selecting a semiconductor substrate to serve as abase.

Further, the crystal plane orientation of the single crystalsemiconductor substrate 1108 may be selected depending on asemiconductor element to be manufactured (a field effect transistor inthis embodiment). For example, a single crystal semiconductor substratehaving a {100} plane, a {110} plane, or the like can be used.

In this embodiment, an ion irradiation separation method is used inwhich hydrogen, helium, or fluorine ions are added by irradiation to apredetermined depth of the single crystal semiconductor substrate, andthen, heat treatment is performed to separate a single crystalsemiconductor layer, which is an outer layer. Alternatively, a methodmay be employed in which single crystal silicon is epitaxially grown onporous silicon and the porous silicon layer is separated by cleavagewith water jetting.

A single crystal silicon substrate is used as the single crystalsemiconductor substrate 1108, and the surface thereof is processed withdilute hydrofluoric acid. Accordingly, a native oxide film is removedand contaminant such as dust which is attached to the surface is alsoremoved, whereby the surface of the single crystal semiconductorsubstrate 1108 is cleaned.

The embrittlement layer 1110 may be formed by irradiating the substratewith ions by an ion doping method (abbreviated as an ID method) or anion implantation method (abbreviated as an II method). The embrittlementlayer 1110 is formed by irradiating the substrate with ions of hydrogen,helium, or a halogen typified by fluorine. In the case of irradiation offluorine ions as a halogen element, BF₃ may be used as a source gas.Note that ion implantation is a method in which an ionized gas ismass-separated and a semiconductor substrate is irradiated with theions.

For example, an ionized hydrogen gas is mass-separated by an ionimplantation method and only H⁺ ions (or only H₂ ⁺ ions) can beselectively accelerated and a single crystal semiconductor substrate canbe irradiated with the ions.

In an ion doping method, without mass separation of an ionized gas,plural kinds of ion species are generated in plasma and accelerated, andthen a single crystal semiconductor substrate is irradiated with theaccelerated ion species. For example, when the single crystalsemiconductor substrate is irradiated with hydrogen ions including H⁺ions, H₂ ⁺ ions, and H₃ ⁺ ions, the proportion of H₃ ions is typically50% or more, for example, in general, the proportion of H₃ ⁺ ions is 80%and the proportion of other ions (H₂ ⁺ ions and H⁺ ions) is 20%. Here,ion doping also refers to irradiation of only H₃ ⁺ ions as ion species.

Alternatively, irradiation may be performed with one ion or plural ionsformed of the same atoms which have different mass. For example, in thecase of irradiation of hydrogen ions, the hydrogen ions preferablyinclude H⁺ ions, H₂ ⁺ ions, and H₃ ⁺ ions with a high proportion of H₃ ⁺ions. In the case of hydrogen ion irradiation, when the hydrogen ionsinclude H⁺ ions, H₂ ⁺ ions, and H₃ ⁺ ions with a high proportion of H₃ ⁺ions, efficiency in irradiation can be increased and irradiation timecan be reduced. With this structure, separation can be performed easily.

An ion doping method and an ion implantation method are described belowin detail. In an ion doping apparatus (also referred to as an IDapparatus) used in an ion doping method, a plasma space is large, sothat the single crystal semiconductor substrate can be irradiated with alarge amount of ions. On the other hand, an ion implantation apparatus(also referred to as an II apparatus) used in an ion implantation methodhas a characteristic that mass separation is performed on ions extractedfrom plasma and only specific ion species can be introduced into asemiconductor substrate. In the ion implantation method, processing isusually performed by scanning a point beam.

As for a plasma generation method, both of the apparatuses create aplasma state by thermoelectrons which are emitted by heating a filament,for example. However, an ion doping method and an ion implantationmethod differ greatly in the proportion of the hydrogen ion species whenthe semiconductor substrate is irradiated with hydrogen ions (H⁺, H₂ ⁺,and H₃ ⁺) which are generated.

In view of irradiation of a larger amount of H₃ ⁺, the ion dopingapparatus is preferable to the ion implantation apparatus.

When the single crystal silicon substrate is irradiated with hydrogenions or halogen ions such as fluorine ions, fluorine which is addedknocks out (expels) silicon atoms in a silicon crystal lattice, so thatblank portions are created effectively and microvoids are made in theembrittlement layer. In this case, the volume of the microvoids formedin the embrittlement layer is changed by heat treatment at relativelylow temperature and separation is performed along the embrittlementlayer, so that a thin single crystal semiconductor layer can be formed.After the irradiation of fluorine ions, irradiation of hydrogen ions maybe performed so that hydrogen is contained in the voids. Since theembrittlement layer which is formed to separate the thin single crystalsemiconductor layer from the single crystal semiconductor substrate isseparated using change in volume of the microvoids formed in theembrittlement layer, it is preferable to make effective use of action offluorine ions or hydrogen ions in such a manner.

A protective layer may be formed between the single crystalsemiconductor substrate and an insulating layer which is to be bonded tothe single crystal semiconductor layer. The protective layer can beformed of a single layer selected from a silicon nitride layer, asilicon oxide layer, a silicon nitride oxide layer, or a siliconoxynitride layer or a stack of a plurality of layers. These layers canbe formed over the single crystal semiconductor substrate before theembrittlement layer is formed in the single crystal semiconductorsubstrate. Alternatively, these layers may be formed over the singlecrystal semiconductor substrate after the embrittlement layer is formedin the single crystal semiconductor substrate.

Note that a silicon oxynitride layer refers to a layer that containsmore oxygen than nitrogen and, in the case where measurements areperformed using Rutherford backscattering spectrometry (RBS) andhydrogen forward scattering (HFS), contains oxygen, nitrogen, silicon,and hydrogen at concentrations of 50 to 70 at. %, 0.5 to 15 at. %, 25 to35 at. %, and 0.1 to 10 at. %, respectively. Further, a silicon nitrideoxide layer refers to a layer that contains more nitrogen than oxygenand, in the case where measurements are performed using RBS and HFS,contains oxygen, nitrogen, silicon, and hydrogen at concentrations of 5to 30 at. %, 20 to 55 at. %, 25 to 35 at. %, and 10 to 30 at. %,respectively. Note that percentages of nitrogen, oxygen, silicon, andhydrogen fall within the ranges given above, where the total number ofatoms contained in the silicon oxynitride film or the silicon nitrideoxide film is defined as 100 at. %.

It is necessary to perform irradiation of ions under high doseconditions in the formation of the embrittlement layer, and the surfaceof the single crystal semiconductor substrate 1108 is roughened in somecases. Accordingly, a protective layer against the ion irradiation, suchas a silicon nitride film, a silicon nitride oxide film, or a siliconoxide film may be provided to a thickness of 50 to 200 nm on the surfaceto be irradiated with ions.

For example, a stack of a silicon oxynitride film (a thickness of 5 nmto 300 nm, preferably 30 nm to 150 nm (for example, 50 nm)) and asilicon nitride oxide film (a thickness of 5 nm to 150 nm, preferably 10to 100 nm (for example, 50 nm)) is formed as the protective layer overthe single crystal semiconductor substrate 1108 by a plasma CVD method.As an example, a silicon oxynitride film is formed to a thickness of 50nm over the single crystal semiconductor substrate 1108, and a siliconnitride oxide film is formed to a thickness of 50 nm over the siliconoxynitride film. Instead of the silicon oxynitride film, a silicon oxidefilm formed by a chemical vapor deposition method using an organosilanegas may be used.

Alternatively, thermal oxidation may be performed after the singlecrystal semiconductor substrate 1108 is degreased and cleaned and anoxide film on the surface is removed. As thermal oxidation, general dryoxidation may be performed, and preferably, oxidation in an oxidizingatmosphere to which halogen is added is performed. For example, heattreatment is performed at a temperature of 700° C. or higher in anatmosphere containing HCl at 0.5 to 10 volume % (preferably 3 volume %)with respect to oxygen. Thermal oxidation is preferably performed at atemperature of 950 to 1100° C. The processing time may be 0.1 to 6hours, preferably 0.5 to 3.5 hours. The thickness of the oxide film tobe formed is 10 to 1000 nm (preferably 50 to 200 nm), and for example,the thickness is 100 nm.

As a substance containing halogen, other than HCl, one or more of HF,NF₃, HBr, Cl₂, ClF₃, BCl₃, F₂, Br₂, dichloroethylene, and the like canbe used.

Heat treatment is performed in such a temperature range, so that agettering effect by a halogen element can be obtained. Getteringparticularly has an effect of removing metal impurities. That is,impurities such as metal change into volatile chloride and are releasedinto air by action of chlorine and removed. The heat treatment has anadvantageous effect on the case where the surface of the single crystalsemiconductor substrate 1108 is subjected to a chemical mechanicalpolishing (CMP) process. Further, hydrogen has an effect of compensatinga defect at the interface between the single crystal semiconductorsubstrate 1108 and an insulating layer to be formed so as to reducelocal level density at the interface, and thus the interface between thesingle crystal semiconductor substrate 1108 and the insulating layer isinactivated to stabilize electric characteristics.

Halogen can be contained in the oxide film formed by the heat treatment.A halogen element is contained at a concentration of 1×10¹⁷ to 5×10²⁰atoms/cm³, whereby the oxide film can function as a protective layerwhich captures impurities such as metal to prevent contamination of thesingle crystal semiconductor substrate 1108.

When the embrittlement layer 1110 is formed, the accelerating voltageand the total number of ions can be adjusted depending on the thicknessof films deposited on the single crystal semiconductor substrate, thethickness of the targeted single crystal semiconductor layer which isseparated from the single crystal semiconductor substrate andtransferred to a light-transmitting substrate, and ion species withwhich irradiation is performed.

For example, a hydrogen gas is used for a raw material, and irradiationof ions is performed at an accelerating voltage of 40 kV with the totalion number of 2×10¹⁶ ions/cm² by an ion doping method, so that theembrittlement layer can be formed. If the protective layer is formed tobe thick and irradiation of ions is performed under the same conditionsto form the embrittlement layer, a thin single crystal semiconductorlayer can be formed as a targeted single crystal semiconductor layerwhich is separated from the single crystal semiconductor substrate andtransferred (transposed) to the light-transmitting substrate. Forexample, although it depends on the proportion of ion species (H⁺ ions,H₂ ⁺ ions, and H₃ ⁺ ions), when the embrittlement layer is formed underthe above conditions and a silicon oxynitride film (a thickness of 50nm) and a silicon nitride oxide film (a thickness of 50 nm) are stackedas a protective layer over the single crystal semiconductor substrate,the thickness of the single crystal semiconductor layer to betransferred to the light-transmitting substrate is approximately 120 nm.Alternatively, when a silicon oxynitride film (a thickness of 100 nm)and a silicon nitride oxide film (a thickness of 50 nm) are stacked as aprotective layer over the single crystal semiconductor substrate, thethickness of the single crystal semiconductor layer to be transferred tothe light-transmitting substrate is approximately 70 nm.

When helium (He) or hydrogen is used for a source gas, irradiation isperformed at an accelerating voltage of 10 to 200 kV with a dose of1×10¹⁶ to 6×10¹⁶ ions/cm², so that the embrittlement layer can beformed. When helium is used for the source gas, irradiation of He⁺ ionsas main ions can be performed without mass separation. Further, whenhydrogen is used for the source gas, irradiation of H₃ ions and H₂ ⁺ions as main ions can be performed. Ion species are changed depending ona plasma generation method, pressure, the supply quantity of source gas,or an accelerating voltage.

As an example of forming the embrittlement layer, a silicon oxynitridefilm (a thickness of 50 nm), a silicon nitride oxide film (a thicknessof 50 nm), and a silicon oxide film (a thickness of 50 nm) are stackedas a protective layer over the single crystal semiconductor substrate,and irradiation of hydrogen is performed at an accelerating voltage of40 kV with a dose of 2×10¹⁶ ions/cm², so that the embrittlement layer isformed in the single crystal semiconductor substrate. After that, asilicon oxide film (a thickness of 50 nm) is formed as an insulatinglayer having a bonding surface over the silicon oxide film, which is anuppermost layer of the protective layer. As another example of formingthe embrittlement layer, a silicon oxide film (a thickness of 100 nm)and a silicon nitride oxide film (a thickness of 50 nm) are stacked as aprotective layer over the single crystal semiconductor substrate, andirradiation of hydrogen is performed at an accelerating voltage of 40 kVwith a dose of 2×10¹⁶ ions/cm², so that the embrittlement layer isformed in the single crystal semiconductor substrate. After that, asilicon oxide film (a thickness of 50 nm) is formed as an insulatinglayer having a bonding surface over the silicon nitride oxide film,which is an uppermost layer of the protective layer. Note that thesilicon oxynitride film and the silicon nitride oxide film may be formedby a plasma CVD method, and the silicon oxide film may be formed by aCVD method using an organosilane gas.

Alternatively, an insulating layer may be formed between thelight-transmitting substrate and the single crystal semiconductorsubstrate. The insulating layer may be formed on either thelight-transmitting substrate side or the single crystal semiconductorsubstrate side, or both of the sides. An insulating layer formed on asurface which is to be bonded has a smooth surface and forms ahydrophilic surface. A silicon oxide film can be used as the insulatinglayer. As the silicon oxide film, a silicon oxide film formed by achemical vapor deposition method using an organosilane gas is preferablyused. Alternatively, a silicon oxide film formed by a chemical vapordeposition method using a silane gas may be used.

Examples of organosilane gas which can be used are silicon-containingcompounds such as tetraethyl orthosilicate (TEOS: Si(OC₂H₅)₄),trimethylsilane (TMS: (CH₃)₃SiH), tetramethylsilane (Si(CH₃)₄),tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane(OMCTS), hexamethyldisilazane (HMDS), triethoxysilane (SiH(OC₂H₅)₃), andtrisdimethylaminosilane (SiH(N(CH₃)₂)₃). Note that when a silicon oxidelayer is formed by a chemical vapor deposition method using organosilanefor a source gas, it is preferable to mix a gas which provides oxygen.Oxygen, nitrous oxide, nitrogen dioxide, or the like can be used as thegas which provides oxygen. Further, an inert gas such as argon, helium,nitrogen, or hydrogen may be mixed.

Alternatively, as the insulating layer formed on the surface which is tobe bonded, a silicon oxide film formed by a chemical vapor depositionmethod using silane such as monosilane, disilane, or trisilane for asource gas may be used. Also in this case, it is preferable to mix aninert gas, a gas which provides oxygen, or the like. Further, thesilicon oxide film to serve as an insulating layer bonded to the singlecrystal semiconductor layer may contain chlorine. Note that in thisspecification, a chemical vapor deposition (CVD) method includes aplasma CVD method, a thermal CVD method, and a photo-CVD method in itscategory.

Alternatively, as the insulating layer formed on the surface which is tobe bonded, silicon oxide formed by heat treatment in an oxidizingatmosphere, silicon oxide which grows by reaction of oxygen radicals,chemical oxide formed with an oxidizing chemical solution, or the likemay be used. As the insulating layer, an insulating layer having asiloxane (Si—O—Si) bond may be used. Further, the insulating layer maybe formed by reaction between the organosilane gas and oxygen radicalsor nitrogen radicals.

The surface of the insulating layer, which is to be bonded, ispreferably set as follows: arithmetic mean roughness Ra is less than 0.8nm and root-mean-square roughness Rms is less than 0.9 nm; morepreferably, Ra is 0.4 nm or less and Rms is 0.5 nm or less; stillpreferably, Ra is 0.3 nm or less and Rms is 0.4 nm or less. For example,Ra is 0.27 nm and Rms is 0.34 nm. In this specification, Ra isarithmetic mean roughness; Rms is root-mean-square roughness; and themeasurement area is 2 μm² or 10 μm².

When the light-transmitting substrate and the single crystalsemiconductor substrate are bonded to each other, a strong bond can beformed by providing an insulating layer which is formed of a siliconoxide film preferably using organosilane for a raw material on one orboth of surfaces which are to be bonded to each other.

In this embodiment, as illustrated in FIG. 15B, a silicon oxide film isformed as an insulating layer 1104 on the surface which is bonded to thelight-transmitting substrate. As the silicon oxide film, a silicon oxidefilm formed by a chemical vapor deposition method using an organosilanegas is preferably used. Alternatively, a silicon oxide film formed by achemical vapor deposition method using a silane gas may be used. Indeposition by a chemical vapor deposition method, a depositiontemperature of, for example, 350° C. or lower (300° C. as a specificexample) is applied as the temperature at which degasification does notoccur from the embrittlement layer 1110 formed in the single crystalsemiconductor substrate. Further, heat treatment temperature which ishigher than the deposition temperature is applied to heat treatment bywhich the single crystal semiconductor layer is separated from thesingle crystal semiconductor substrate.

The light-transmitting substrate may be provided with a silicon nitridefilm or a silicon nitride oxide film which prevents diffusion of animpurity element as a blocking layer (also referred to as a barrierlayer). Further, a silicon oxynitride film may be combined as aninsulating film having a function of relieving stress.

FIG. 15C illustrates a mode in which a blocking layer 1109 provided overa light-transmitting substrate 1101 and a surface of the single crystalsemiconductor substrate 1108, on which the insulating layer 1104 isformed, are disposed in close contact with each other and bonded to eachother. The surfaces which are to be bonded to each other are cleanedsufficiently. The surface of the blocking layer 1109 provided over thelight-transmitting substrate 1101 and the surface of the single crystalsemiconductor substrate 1108, on which the insulating layer 1104 isformed, may be cleaned by megasonic cleaning or the like. Further, thesurfaces may be cleaned with ozone water after megasonic cleaning, sothat an organic substance can be removed and the hydrophilicity of thesurfaces can be improved.

By making the blocking layer 1109 over the light-transmitting substrate1101 and the insulating layer 1104 face each other and pressing one partthereof from the outside, the blocking layer 1109 and the insulatinglayer 1104 attract each other by increase in van der Waals forces orinfluence of hydrogen bonding due to local reduction in distance betweenthe bonding surfaces. Further, since the distance between the blockinglayer 1109 over the light-transmitting substrate 1101 and the insulatinglayer 1104 which face each other in an adjacent region is also reduced,a region in which van der Waals forces strongly act or a region which isinfluenced by hydrogen bonding is increased. Accordingly, bondingproceeds and spreads to the entire bonding surfaces.

When the blocking layer 1109 and the insulating layer 1104 are pressedagainst each other so that one of the four corners of the substrate ispressed at a pressure of 100 to 5000 kPa, the bonding surfaces comeclose to each other; thus, the bonding can shift from Van der Waalsforce to hydrogen bonding. When the bonding surfaces at one portion comeclose to each other in the substrate, the bonding surfaces at theadjacent portion also come close to each other and the bonding shifts tohydrogen bonding; thus, the bonding at the entire surfaces can shift tohydrogen bonding.

In order to form a favorable bond, the surface may be activated. Forexample, the surface which is to be bonded is irradiated with an atomicbeam or an ion beam. When an atomic beam or an ion beam is used, aninert gas neutral atom beam or an inert gas ion beam of argon or thelike can be used. Alternatively, plasma irradiation or radical treatmentis performed. Such surface treatment makes it easier to form a bondbetween materials of different kinds even at a temperature of 200 to400° C.

Further, in order to increase bonding strength of a bonding interfacebetween the light-transmitting substrate and the insulating layer, heattreatment is preferably performed. For example, heat treatment isperformed at a temperature of 70 to 350° C. (for example, at 200° C. for2 hours) in an oven, a furnace, or the like.

In FIG. 15D, after the light-transmitting substrate 1101 and the singlecrystal semiconductor substrate 1108 are attached to each other, heattreatment is performed, and the single crystal semiconductor substrate1108 is separated from the light-transmitting substrate 1101 by usingthe embrittlement layer 1110 as a cleavage plane. When heat treatment isperformed at, for example, 400 to 700° C., the volume of the microvoidsformed in the embrittlement layer 1110 is changed, which enablescleavage along the embrittlement layer 1110. Since the insulating layer1104 is bonded to the light-transmitting substrate 1101 with theblocking layer 1109 interposed therebetween, a single crystalsemiconductor layer 1102 having the same crystallinity as the singlecrystal semiconductor substrate 1108 is left over the light-transmittingsubstrate 1101.

Heat treatment in a temperature range of 400 to 700° C. may becontinuously performed in the apparatus same as that for the above heattreatment for increasing bonding strength or in another apparatus. Forexample, after heat treatment in a furnace at 200° C. for 2 hours, thetemperature is increased to near 600° C. and held for 2 hours; thetemperature is decreased to a temperature ranging from 400° C. to roomtemperature; and then the substrate is taken out of the furnace.Alternatively, heat treatment may be performed at the temperatureincreasing from room temperature. Further, after heat treatment isperformed in a furnace at 200° C. for 2 hours, heat treatment may beperformed in a temperature range of 600 to 700° C. in a rapid thermalannealing (RTA) apparatus for 1 minute to 30 minutes (for example, at600° C. for 7 minutes or at 650° C. for 7 minutes).

By heat treatment in a temperature range of 400 to 700° C., bondingbetween the insulating layer and the light-transmitting substrate shiftsfrom hydrogen bonding to covalent bonding, and an element added to theembrittlement layer is separated out and the pressure rises, whereby thesingle crystal semiconductor layer can be separated from the singlecrystal semiconductor substrate. After the heat treatment, one of thelight-transmitting substrate and the single crystal semiconductorsubstrate is provided over the other, and the light-transmittingsubstrate and the single crystal semiconductor substrate can beseparated from each other without application of large force. Forexample, one substrate located over the other substrate is lifted by avacuum chuck, so that the substrate can be easily separated. At thistime, if the substrate on a lower side is fixed with a vacuum chuck or amechanical chuck, the light-transmitting substrate and the singlecrystal semiconductor substrate can be separated from each other withouthorizontal misalignment.

Note that FIGS. 15A to 15D and FIGS. 16A to 16C illustrate an example inwhich the single crystal semiconductor substrate 1108 is smaller thanthe light-transmitting substrate 1101; however, the present invention isnot limited thereto, and the single crystal semiconductor substrate 1108and the light-transmitting substrate 1101 may have the same size or thesingle crystal semiconductor substrate 1108 may be larger than thelight-transmitting substrate 1101.

FIGS. 16A to 16C illustrate steps in which an insulating layer isprovided on the light-transmitting substrate side and a single crystalsemiconductor layer is formed. FIG. 16A illustrates a step in whichirradiation of ions accelerated by an electric field is performed to apredetermined depth of the single crystal semiconductor substrate 1108provided with a silicon oxide film as a protective layer 1121 to formthe embrittlement layer 1110. Ton irradiation is performed in a mannersimilar to that in the case of FIG. 15A. By forming the protective layer1121 on the surface of the single crystal semiconductor substrate 1108,the surface can be prevented from being damaged by ion irradiation andlosing the planarity. Further, the protective layer 1121 has anadvantageous effect of preventing diffusion of impurities into thesingle crystal semiconductor layer 1102 formed from the single crystalsemiconductor substrate 1108.

FIG. 16B illustrates a step in which the light-transmitting substrate1101 provided with the blocking layer 1109 and the insulating layer 1104is disposed in close contact with the surface of the single crystalsemiconductor substrate 1108, on which the protective layer 1121 isformed, to form a bond. The bond is formed by disposing the insulatinglayer 1104 over the light-transmitting substrate 1101 in close contactwith the protective layer 1121 over the single crystal semiconductorsubstrate 1108.

After that, the single crystal semiconductor substrate 1108 is separatedas illustrated in FIG. 16C. Heat treatment for separating a singlecrystal semiconductor layer is performed in a manner similar to that inthe case of FIG. 15D. Thus, a semiconductor substrate having an SOIstructure, according to an embodiment of the present invention, whichincludes the single crystal semiconductor layer over the substrate withthe insulating layer interposed therebetween can be obtained asillustrated in FIG. 16C.

In some cases, the single crystal semiconductor layer which is separatedfrom the single crystal semiconductor substrate and transferred to thelight-transmitting substrate has crystal defects due to the separationstep and the ion implantation step and thus loses surface planarity andhas unevenness. In the case where a transistor is formed as asemiconductor element by using the single crystal semiconductor layer,it is difficult to form a thin gate insulating layer with a highwithstand voltage on the surface of the single crystal semiconductorlayer having such unevenness. Further, if the single crystalsemiconductor layer has crystal defects, performance and reliability ofthe transistor are adversely affected; for example, a localizedinterface state density with the gate insulating layer is increased.

Therefore, the single crystal semiconductor layer is preferablyirradiated with electromagnetic waves such as a laser beam to reducecrystal defects. At least part of the single crystal semiconductor layeris melted by irradiation with electromagnetic waves, whereby crystaldefects in the single crystal semiconductor layer can be reduced. Notethat an oxide film (a native oxide film or a chemical oxide film) formedon the surface of the single crystal semiconductor layer may be removedby dilute hydrofluoric acid before irradiation with the electromagneticwaves.

Any electromagnetic wave may be used as long as it provides high energyto the single crystal semiconductor layer, and a laser beam can bepreferably used.

Alternatively, the energy can be supplied mainly by heat conductionwhich is caused by colliding the particles having high energy with thesingle crystal semiconductor layer by irradiation or the like. As a heatsource for supplying the particles having high energy, plasma such asatmospheric-pressure plasma, high-pressure plasma, or a thermal plasmajet, a flame of a gas burner, or the like can be used. Alternatively, anelectron beam or the like can be used.

A wavelength of the electromagnetic wave is set so that it is absorbedby the single crystal semiconductor layer. The wavelength can bedetermined in consideration of the skin depth of the electromagneticwave or the like. For example, the wavelength of the electromagneticwave can be 190 to 600 nm. Moreover, the electromagnetic wave energy canbe determined in consideration of the wavelength of the electromagneticwave, the skin depth of the electromagnetic wave, the thickness of thesingle crystal semiconductor layer to be irradiated, or the like.

A laser emitting laser beam can be a continuous wave laser, a pseudocontinuous wave laser, or a pulsed laser. A pulsed laser is preferablyused for partial melting. For example, an excimer laser such as a KrFlaser, or a gas laser such as an Ar laser or a Kr laser can be used.Further, a solid-state laser such as a YAG laser, a YVO₄ laser, a YLFlaser, a YAlO₃ laser, a GdVO₄ laser, a KGW laser, a KYW laser, analexandrite laser, a Ti:sapphire laser, a Y₂O₃ laser, and the like canbe used. Note that an excimer laser is a pulsed laser, and somesolid-state lasers such as a YAG laser can be used as a continuous wavelaser, a pseudo continuous wave laser, and a pulsed laser. In addition,as for a solid-state laser, the second to fifth harmonics of afundamental wave can be preferably used. Further, a semiconductor laserof GaN, GaAs, GaAlAs, InGaAsP, or the like can be used.

If the single crystal semiconductor layer can be irradiated withelectromagnetic wave energy, lamp light may be used. For example, lightemitted from an ultraviolet lamp, a black light, a halogen lamp, a metalhalide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodiumlamp, or a high-pressure mercury lamp may be used. Flash annealing withthe use of the above lamp light may be used. Since flash annealing whichis performed by preferably using a halogen lamp, a xenon lamp, or thelike takes very short treatment time, heating up of thelight-transmitting substrate can be suppressed.

A shutter, a reflector such as a mirror or a half mirror, an opticalsystem including a cylindrical lens, a convex lens, or the like may beprovided in order to adjust the shape or the path of electromagneticwaves.

Note that for irradiation with electromagnetic waves, an electromagneticwave may be selectively emitted, or light (an electromagnetic wave) canbe emitted by scanning the light (the electromagnetic wave) in the X-Ydirections. In this case, a polygon mirror or a galvanometer mirror ispreferably used in the optical system.

Irradiation with electromagnetic waves can be performed in an atmospherewhich contains oxygen, such as an atmospheric atmosphere, or in an inertatmosphere such as a nitrogen atmosphere. In order to performirradiation with electromagnetic waves in an inert atmosphere,irradiation with electromagnetic waves may be performed in an airtightchamber an atmosphere in which is controlled. In the case where achamber is not used, a nitrogen atmosphere can be formed by spraying aninert gas such as a nitrogen gas on a surface to be irradiated withelectromagnetic waves.

Further, polishing treatment may be performed on the surface of thesingle crystal semiconductor layer to which high energy is supplied byelectromagnetic wave irradiation or the like to reduce crystal defects.Polishing treatment can enhance the planarity of the surface of thesingle crystal semiconductor layer.

For the polishing treatment, a chemical mechanical polishing (CMP)method or a liquid jet polishing method can be used. Note that thesurface of the single crystal semiconductor layer is cleaned to bepurified before the polishing treatment. The cleaning may be performedby megasonic cleaning, two-fluid jet cleaning, or the like; and dust orthe like on the surface of the single crystal semiconductor layer isremoved by the cleaning. Further, it is preferable to remove a nativeoxide film or the like on the surface of the single crystalsemiconductor layer by using a dilute hydrofluoric acid to expose thesingle crystal semiconductor layer.

Further, polishing treatment (or etching treatment) may be performed onthe surface of the single crystal semiconductor layer before irradiationwith electromagnetic waves.

Further, when the single crystal semiconductor layer is transferred fromthe single crystal semiconductor substrate, the single crystalsemiconductor substrate is selectively etched, and a plurality of singlecrystal semiconductor layers of which shapes are processed may betransferred to a light-transmitting substrate. A plurality ofisland-shaped single crystal semiconductor layers can be formed over thelight-transmitting substrate. Since the single crystal semiconductorlayers of which shapes are processed in advance are transferred from thesingle crystal semiconductor substrate, there is no limitation on thesize and shape of the single crystal semiconductor substrate. Therefore,the single crystal semiconductor layers can be more efficientlytransferred to a large light-transmitting substrate.

Further, the single crystal semiconductor layer which is bonded to thelight-transmitting substrate is etched so that the shape of the singlecrystal semiconductor layer may be processed, modified, and controlledprecisely. Accordingly, the single crystal semiconductor layer can beprocessed to have the shape of a semiconductor element, and error in aformation position and a defect in the shape of the single crystalsemiconductor layer due to pattern misalignment caused by light in lightexposure for forming a resist mask, which goes around the resist mask,positional misalignment caused by a bonding step in transferring thesingle crystal semiconductor layer, or the like can be modified.

Accordingly, a plurality of single crystal semiconductor layers having adesired shape can be formed over the light-transmitting substrate withhigh yield. Accordingly, a semiconductor device which includes asemiconductor element and an integrated circuit that have more preciseand high performance can be manufactured over a large substrate withhigh throughput and high productivity.

After being separated from the single crystal semiconductor substrate,the single crystal semiconductor layer may be bonded to thelight-transmitting substrate. The surface of the single crystalsemiconductor layer which is exposed by cleavage may face and be bondedto the light-transmitting substrate or may be bonded to thelight-transmitting substrate so as to be in contact with the gateinsulating film.

In this embodiment, when a single crystal silicon substrate is used asthe single crystal semiconductor substrate 1108, a single crystalsilicon layer can be obtained as the single crystal semiconductor layer1102. Further, since a method for manufacturing a semiconductor devicein this embodiment allows the process temperature to be 700° C. orlower, a glass substrate can be used as the light-transmitting substrate1101. That is, a transistor can be formed over a glass substrate in amanner similar to that of a conventional thin film transistor, and asingle crystal silicon layer can be used for the semiconductor layer.Accordingly, it is possible to form a transistor with high performanceand high reliability, which can operate at high speed, has a lowsubthreshold value and high field effect mobility, and can be drivenwith low voltage consumption, over a light-transmitting substrate suchas a glass substrate.

This embodiment can be combined with Embodiment 1 as appropriate.

Embodiment 3

This embodiment describes an example of steps of bonding a singlecrystal semiconductor layer from a single crystal semiconductorsubstrate to a light-transmitting substrate, which are different fromthose in Embodiment 2. Accordingly, description of the same portion or aportion having a similar function to the portion in Embodiment 2 isomitted.

First, processing on the single crystal substrate side is described. Inthis embodiment, a single crystal semiconductor substrate is degreasedand cleaned to remove an oxide film on the surface, and thermaloxidation is performed. As thermal oxidation, oxidation in an oxidizingatmosphere to which halogen is added is preferably performed. Forexample, heat treatment is performed at a temperature of 700° C. orhigher in an atmosphere containing HCl at 0.5 to 10 volume % (preferably3 volume %) with respect to oxygen. Thermal oxidation is preferablyperformed at a temperature of 950 to 1100° C. The processing time may be0.1 to 6 hours, preferably 0.5 to 3.5 hours. The thickness of the oxidefilm to be formed is 10 to 1000 nm (preferably 50 to 200 nm) and forexample, the thickness is 100 nm.

As a substance containing halogen, other than HCl, one or more of HF,NF₃, HBr, Cl₂, ClF₃, BCl₃, F₂, Br₂, and the like can be used.

Heat treatment is performed in such a temperature range, so that agettering effect by a halogen element can be obtained. Getteringparticularly has an effect of removing metal impurities. That is,impurities such as metal change into volatile chloride and are releasedinto air by action of chlorine and removed. The heat treatment has anadvantageous effect on the case where the surface of the single crystalsemiconductor substrate is subjected to chemical mechanical polishing(CMP). Further, hydrogen has an effect of compensating a defect at theinterface between the single crystal semiconductor substrate and aninsulating layer to be formed over a light-transmitting substrate so asto reduce local level density at the interface, and thus the interfacebetween the single crystal semiconductor substrate and the insulatinglayer is inactivated to stabilize electric characteristics.

Halogen can be contained in the oxide film formed by the heat treatment.A halogen element is contained at a concentration of 1×10¹⁷ to 5×10²⁰atoms/cm³, whereby the oxide film can function as a protective layerwhich captures impurities such as metal to prevent contamination of thesingle crystal semiconductor substrate.

Ions are introduced into the single crystal semiconductor substrate toform an embrittlement layer. The depth of a region where theembrittlement layer is formed can be adjusted by the acceleration energyof the ions to be introduced and the angle at which the ions enter. Theacceleration energy can be adjusted by an acceleration voltage, a dose,or the like.

As a gas used in ion introduction, a hydrogen gas, a rare gas, or thelike is used. In this embodiment, a hydrogen gas is preferably used.When a hydrogen gas is used in an ion doping method, generated ionspecies are H⁺, H₂ ⁺, and H₃ ⁺, and it is preferable that H₃ ⁺ beintroduced to the single crystal semiconductor substrate in the largestamount. H₃ ⁺ has higher introduction efficiency than H⁺ or H₂ ⁺, so thatintroduction time can be reduced. Further, a crack is easily generatedin the embrittlement layer in a later step.

Next, processing on the light-transmitting substrate side is described.First, a surface of the light-transmitting substrate is cleaned. Forcleaning, ultrasonic cleaning may be performed with a hydrochloric acidhydrogen peroxide mixture (HPM), a sulfuric acid hydrogen peroxidemixture (SPM), an ammonia hydrogen peroxide mixture (APM), dilutedhydrogen fluoride (DHF), or the like. In this embodiment, ultrasoniccleaning is performed with a hydrochloric acid hydrogen peroxidemixture.

Then, planarization treatment by plasma treatment is performed on thelight-transmitting substrate from which impurities such as dust on thesurface are removed by cleaning. In this embodiment, plasma treatment isperformed in such a manner that an inert gas such as an argon (Ar) gasis used in a vacuum chamber and a bias voltage is applied to thelight-transmitting substrate to be processed to generate plasma. Anoxygen (O₂) gas or a nitrogen (N₂) gas may be introduced together withthe inert gas.

The light-transmitting substrate is set to be in the cathode direction,and positive ions of Ar in the plasma are accelerated in the cathodedirection to collide with the light-transmitting substrate. By collisionof the Ar positive ions, the surface of the light-transmitting substrateis sputter-etched. Accordingly, a projection on the surface of thelight-transmitting substrate is etched, so that the surface of thelight-transmitting substrate can be planarized. A reactive gas has anadvantageous effect of repairing defects caused by sputter etching ofthe surface of the light-transmitting substrate.

Next, an insulating layer is formed over the light-transmittingsubstrate. In this embodiment, an oxide film containing aluminum oxideas its main component, which is other than a silicon-based insulatinglayer, is used. The oxide film containing aluminum oxide as its maincomponent refers to an oxide film in which aluminum oxide is containedat least 10% by weight where the total amount of all components in theoxide film is 100% by weight. Alternatively, as the insulating layer, afilm which contains aluminum oxide as its main component and alsocontains one or both of magnesium oxide and strontium oxide can be used.Note that aluminum oxide containing nitrogen may be used.

The insulating layer can be formed by a sputtering method. As a targetused in a sputtering method, for example, metal containing aluminum ormetal oxide such as aluminum oxide can be used. Note that a material ofthe target may be selected as appropriate depending on the film to beformed.

In the case where metal is used as the target, the insulating layer isformed in such a manner that sputtering is performed while a reactivegas (for example, oxygen) is introduced (by a reactive sputteringmethod). As the metal, magnesium (Mg); an alloy containing aluminum andmagnesium; an alloy containing aluminum and strontium (Sr); or an alloycontaining aluminum, magnesium, and strontium can be used other thanaluminum. In this case, sputtering may be performed using a directcurrent (DC) power supply or a radio frequency (RF) power supply.

In the case where metal oxide is used as the target, the insulatinglayer is formed by sputtering with a radio frequency (RF) power supply(by an RF sputtering method). As the metal oxide, magnesium oxide;strontium oxide; oxide containing aluminum and magnesium; oxidecontaining aluminum and strontium; or oxide containing aluminum,magnesium, and strontium can be used other than aluminum oxide.

Alternatively, the insulating layer may be formed by a bias sputteringmethod. In the case where a bias sputtering method is used, a film canbe deposited while a surface of the film can be planarized.

The oxide film containing aluminum as its main component can preventimpurities such as moisture and mobile ions included in thelight-transmitting substrate from diffusing into a single crystalsemiconductor layer to be provided over the light-transmitting substratelater.

Next, the surface of the single crystal semiconductor substrate and thesurface of the light-transmitting substrate are made to face each other,and the single crystal semiconductor substrate and the insulating layerare bonded to each other. The single crystal semiconductor substrate anda surface of the insulating layer formed over the light-transmittingsubstrate are disposed in close contact with each other, so that a bondis formed.

Note that before the single crystal semiconductor substrate and thelight-transmitting substrate are bonded to each other, surface treatmentis preferably performed on the insulating layer formed over thelight-transmitting substrate.

Then, as in Embodiment 2, heat treatment is performed to carry outseparation (cleavage) along the embrittlement layer, whereby a singlecrystal semiconductor layer can be provided over the light-transmittingsubstrate with the insulating layer interposed therebetween.

A semiconductor integrated circuit portion can be formed using thesingle crystal semiconductor layer provided over the light-transmittingsubstrate.

Next, steps of repeatedly using a separated single crystal semiconductorsubstrate (process for reprocessing a semiconductor substrate) aredescribed.

First, a separated single crystal semiconductor substrate is taken out.In some cases, an end portion of the single crystal semiconductorsubstrate is not sufficiently bonded to the light-transmitting substratedue to edge roll-off. As a result of this, in some cases, the endportion of the single crystal semiconductor substrate is not separatedalong the embrittlement layer, so that the insulating layer or the likeis left.

A residue on the end portion of the single crystal semiconductorsubstrate is removed. The residue can be removed by wet etchingtreatment. Specifically, wet etching is performed using a mixturesolution containing hydrofluoric acid, ammonium fluoride, and surfactant(for example, product name: LAL500 manufactured by Stella ChemifaCorporation) as an etchant.

Further, the embrittlement layer into which hydrogen ions are introducedcan be removed by wet etching using an organic alkaline aqueous solutiontypified by tetramethylammonium hydroxide (TMAH). By performing suchtreatment, a step due to the residue on the end portion of the singlecrystal semiconductor substrate is reduced.

Next, the single crystal semiconductor substrate is oxidized in ahalogen atmosphere to form an oxide film, and after that, the oxide filmis removed. Hydrogen chloride (HCl) can be used as the halogen.Accordingly, a gettering effect by a halogen element can be obtained.Gettering particularly has an effect of removing metal impurities. Thatis, impurities such as metal change into volatile chloride and arereleased into air by action of chlorine and removed.

Then, a CMP process is performed on the single crystal semiconductorsubstrate as polishing treatment. Thus, the step in the end portion ofthe single crystal semiconductor substrate is removed, and the surfaceof the single crystal semiconductor substrate can be planarized. Afterthat, the obtained single crystal semiconductor substrate is used againas a base wafer.

As described in this embodiment, by repeatedly using a single crystalsemiconductor substrate through the steps of reprocessing a singlecrystal semiconductor substrate, cost reduction can be achieved.Further, by using the steps of reprocessing a single crystalsemiconductor substrate described in this embodiment, a surface of thesingle crystal semiconductor substrate can be sufficiently planarizedeven when the single crystal semiconductor substrate is repeatedly used.Accordingly, adhesion between the single crystal semiconductor substrateand the light-transmitting substrate can be increased and bondingdefects can be reduced.

This embodiment can be combined with any of Embodiment 1 and Embodiment2 as appropriate.

Embodiment 4

In this embodiment, a variety of examples of electronic appliances eachof which includes a sensor obtained according to an embodiment of thepresent invention are described. Examples of electronic appliances towhich an embodiment of the present invention is applied include acomputer, a display, a mobile phone, a television device, and the like.Specific examples of those electronic appliances are illustrated inFIGS. 10A to 10C, FIGS. 11A and 11B, FIG. 12, FIGS. 13A and 13B, andFIG. 14.

FIGS. 10A to 10C illustrate mobile phones and the mobile phone in FIG.10A includes a main body (A) 701, a main body (B) 702, a housing 703,operation keys 704, an audio output portion 705, an audio input portion706, a circuit substrate 707, a display panel (A) 708, a display panel(B) 709, a hinge 710, a light-transmitting material portion 711, and asensor 712.

The sensor 712 detects the light which is transmitted through thelight-transmitting material portion 711, and luminance of the displaypanel (A) 708 and the display panel (B) 709 are controlled based onilluminance of detected ambient light, or illumination of the operationkeys 704 is controlled based on illuminance obtained by the sensor 712.Accordingly, current consumption of the mobile phone can be reduced.

FIGS. 10B and 10C illustrate another example of a mobile phone. In FIGS.10B and 10C, reference numeral 721 denotes the main body, 722 denotes ahousing, 723 denotes a display panel, 724 denotes operation keys, 725denotes an audio output portion, 726 denotes an audio input portion, 727denotes a sensor, and 728 denotes a sensor.

In the mobile phone illustrated in FIG. 10B, luminance of the displaypanel 723 and the operation keys 724 can be controlled by detectingambient light by the sensor 727 which is provided in the main body 721.

In the mobile phone illustrated in FIG. 10C, the sensor 728 is providedinside the main body 721 in addition to the structure of FIG. 10B. Bythe sensor 728, luminance of the backlight which is provided in thedisplay panel 723 can also be detected.

FIG. 11A illustrates a computer including a main body 731, a housing732, a display portion 733, a keyboard 734, an external connection port735, a pointing device 736, and the like.

FIG. 11B illustrates a television device which is an example of adisplay device and includes a housing 741, a supporting base 742, adisplay portion 743, and the like.

FIG. 12 illustrates a specific structure in the case of using a liquidcrystal panel as a display portion 733 provided in a computerillustrated in FIG. 11A and as the display portion 743 of the displaydevice illustrated in FIG. 11B.

A liquid crystal panel 762 illustrated in FIG. 12 is incorporated in ahousing 761 and includes substrates 751 a and 751 b, a liquid crystallayer 752 interposed between the substrates 751 a and 751 b, polarizingfilters 752 a and 752 b, a backlight 753, and the like. A housing 761 isprovided with a sensor 754.

The sensor 754 which is manufactured using an embodiment of the presentinvention detects the amount of light from the backlight 753, and theinformation is fed back for adjusting luminance of the liquid crystalpanel 762.

FIGS. 13A and 13B illustrate an example of a camera in which a sensor810 using an embodiment of the present invention is included, forexample a digital camera. FIG. 13A is a front perspective view seen fromthe front side of the digital camera, and FIG. 13B is a back perspectiveview seen from the back side of the digital camera. In FIG. 13A, thedigital camera is provided with a release button 801, a main switch 802,a viewfinder 803, a flush portion 804, a lens 805, a lens barrel 806, ahousing 807, and the sensor 810.

In addition, in FIG. 13B, a viewfinder eyepiece 811, a monitor 812, andoperation buttons 813 a and 813 b are provided.

When the release button 801 is pressed down halfway, a focusingadjusting mechanism and an exposure adjusting mechanism operate, andwhen the release button is pressed down fully, a shutter opens.

The main switch 802 switches on or off of a power source of a digitalcamera by being pressed or rotated.

The viewfinder 803 is placed at the upper portion of the lens 805 of afront side of the digital camera and is a device for recognizing an areawhich is taken or a focus position from the viewfinder eyepiece 811illustrated in FIG. 13B.

The flush portion 804 is placed at the upper portion of the front sideof the digital camera, and when object luminance is low, supportinglight is emitted as soon as the release button is pressed down so thatthe shutter is opened.

The lens 805 is placed at the front face of the digital camera. The lensis formed of a focusing lens, a zoom lens, or the like, and forms aphotographing optical system with a shutter and aperture that are notillustrated. Note that an image pickup device such as charge coupleddevice (CCD) is provided at the back of the lens.

The lens barrel 806 is for moving a lens position to adjust the focus ofthe focusing lens, the zoom lens, and the like. In shooting, the lensbarrel is slid out to move the lens 805 forward. In addition, whencarrying the camera, the lens 805 is moved backward to make the cameracompact. Note that a structure is employed in this embodiment, in whichthe lens barrel is slid out so that the object can be shot by beingzoomed; however, the structure is not limited to this structure.Instead, a digital camera may employ a structure in which zoom shootingcan be conducted without sliding out the lens barrel by a photographingoptical system inside the housing 807.

The viewfinder eyepiece 811 provided at the upper portion of the backside of the digital camera is for looking therethrough when checking anarea which is taken or a focus point.

The operation buttons 813 are buttons for a variety of functions thatare provided at the rear side of the digital camera and include a set upbutton, a menu button, a display button, a functional button, aselection button, and the like.

When the sensor 810 to which an embodiment of the present invention isapplied is incorporated in the camera illustrated in FIGS. 13A and 13B,the sensor 810 can detect whether light exists or not and the lightintensity; accordingly, an exposure adjustment or the like of the cameracan be performed. Since the sensor according to an embodiment of thepresent invention is thin, the device can be small even when the sensoris mounted on. Miniaturization of a component such as the sensor iseffective particularly when the component is used for portableelectronic appliances.

An embodiment of the present invention can also be applied to a portableinformation terminal which has a function of sound reproduction. FIG. 14illustrates a digital player which is one typical example of an audiodevice. The digital player illustrated in FIG. 14 includes a main body2130, a display portion 2131, a memory portion 2132, operating portions2133, a pair of earphones 2134, a sensor 2135, a sensor 2136, a controlportion 2137, and the like. Note that a headphone or a wireless earphonecan be used instead of the earphones 2134.

Being an optical sensor which detects light, the sensor 2135 is providedin a region where light is blocked in the earphone when the earphone isworn. On the other hand, being a pressure-sensitive sensor, the sensor2136 is provided in a region where the sensor touches the ear in theearphone when the earphone is worn. Whether or not the earphone is worncan be detected by the sensor 2135 which detects existence of light, andby the sensor 2136 which detects existence of pressure. The controlportion 2137 controls the digital player with the information detectedby the sensor 2135 and the sensor 2136 so that the digital player isturned on when the earphone is worn and the digital player is turned offwhen the earphone is not worn. Thus, even if the operating portions 2133of the main body 2130 of the digital player is not controlled directly,on or off of the digital player can be switched automatically by whetheror not the earphone is worn.

The color sensor according to an embodiment of the present invention canbe used as the sensor 2138, which can detect ambient light and cancontrol luminance of the display portion 2131 based on illuminance ofdetected ambient light.

Further, with the memory portion 2132, an image or sound (music) can berecorded and reproduced by controlling the operating portions 2133. Notethat when white characters are displayed on a black background in thedisplay portion 2131, power consumption can be suppressed. Note that amemory device which is provided in the memory portion 2132 may beremovable.

The semiconductor device according to an embodiment of the presentinvention can also be applied to other electronic devices such as aprojection TV and a navigation system. That is, the semiconductor devicecan be applied to anything that is required to detect light.

Note that this embodiment can be combined with any of Embodiment 1 toEmbodiment 3 as appropriate.

This application is based on Japanese Patent Application serial no.2008-083056 filed with Japan Patent Office on Mar. 27, 2008, the entirecontents of which are hereby incorporated by reference.

1. A semiconductor device comprising: a first and second semiconductorintegrated circuits bonded to a structure body in which a fibrous bodyis impregnated with an organic resin, the structure body having anopening, each of the first and second semiconductor integrated circuitscomprising: a light-transmitting substrate having a step section, thestep section being on a first surface of the light-transmittingsubstrate; a semiconductor integrated circuit portion including aphotoelectric conversion element on a second surface of thelight-transmitting substrate; and a chromatic color light-transmittingresin layer which covers the first surface and the step section of thelight-transmitting substrate, wherein a width of the step section on thefirst surface is smaller than a width of the second surface of thelight-transmitting substrate, wherein a color of the chromatic colorlight-transmitting resin layer of the first semiconductor integratedcircuit is different from a color of the chromatic colorlight-transmitting resin layer of the second semiconductor integratedcircuit, and wherein the first and second semiconductor integratedcircuits are bonded to the structure body so that a portion of the stepsection is provided in the opening formed in the structure body.
 2. Thesemiconductor device according to claim 1, wherein a cross section ofthe light-transmitting substrate has a shape of upside-down T in blockletter.
 3. The semiconductor device according to claim 1, wherein thefibrous body is a woven fabric or a nonwoven fabric.
 4. Thesemiconductor device according to claim 1, wherein the fibrous body isformed using a polyvinyl alcohol fiber, a polyester fiber, a polyamidefiber, a polyethylene fiber, an aramid fiber, a polyparaphenylenebenzobisoxazole fiber, a glass fiber, or a carbon fiber.
 5. Thesemiconductor device according to claim 1, wherein the organic resin isa thermosetting resin, a thermoplastic resin, or a photocurable resin.6. The semiconductor device according to claim 5, wherein thethermosetting resin is an epoxy resin, an unsaturated polyester resin, apolyimide resin, a bismaleimide-triazine resin, or a cyanate resin. 7.The semiconductor device according to claim 5, wherein the thermoplasticresin is a polyphenylene oxide resin, a polyetherimide resin, or afluorine resin.
 8. The semiconductor device according to claim 1,wherein a light-transmitting resin layer is stacked over the chromaticcolor light-transmitting resin layer.
 9. The semiconductor deviceaccording to claim 8, wherein a thickness of the light-transmittingresin layer is larger than that of the chromatic colorlight-transmitting resin layer.
 10. The semiconductor device accordingto claim 1, wherein the second surface and a top surface of thelight-transmitting substrate are quadrangles, and an area of the secondsurface is larger than an area of the top surface.
 11. The semiconductordevice according to claim 1, wherein each of the first and secondsemiconductor integrated circuits includes an amplifier circuit foramplifying an output of the photoelectric conversion element, andwherein the photoelectric conversion element has a layered structure inwhich a p-type semiconductor layer, an i-type semiconductor layer, andan n-type semiconductor layer are stacked.
 12. The semiconductor deviceaccording to claim 1, wherein the light-transmitting substrate is aglass substrate.
 13. A semiconductor device comprising: a first andsecond semiconductor integrated circuits bonded to a structure body inwhich a fibrous body is impregnated with an organic resin, the structurebody having an opening, each of the first and second semiconductorintegrated circuits comprising: a light-transmitting substrate onesurface of which is a top surface and another surface of which is abottom surface, the light-transmitting substrate having a step sectionwhich is an upper portion and the light-transmitting substrate having across section in which a thickness of the upper portion is smaller thana thickness of a lower portion; a semiconductor integrated circuitportion including a photoelectric conversion element on the bottomsurface of the light-transmitting substrate; and a chromatic colorlight-transmitting resin layer which covers the top surface of thelight-transmitting substrate, wherein a color of the chromatic colorlight-transmitting resin layer of the first semiconductor integratedcircuit is different from a color of the chromatic colorlight-transmitting resin layer of the second semiconductor integratedcircuit, and wherein the first and second semiconductor integratedcircuits are bonded to the structure body so that a portion of the stepsection is provided in the opening formed in the structure body.
 14. Thesemiconductor device according to claim 13, wherein the cross section ofthe light-transmitting substrate has a shape of upside-down T in blockletter.
 15. The semiconductor device according to claim 13, wherein thefibrous body is a woven fabric or a nonwoven fabric.
 16. Thesemiconductor device according to claim 13, wherein the fibrous body isformed using a polyvinyl alcohol fiber, a polyester fiber, a polyamidefiber, a polyethylene fiber, an aramid fiber, a polyparaphenylenebenzobisoxazole fiber, a glass fiber, or a carbon fiber.
 17. Thesemiconductor device according to claim 13, wherein the organic resin isa thermosetting resin, a thermoplastic resin, or a photocurable resin.18. The semiconductor device according to claim 17, wherein thethermosetting resin is an epoxy resin, an unsaturated polyester resin, apolyimide resin, a bismaleimide-triazine resin, or a cyanate resin. 19.The semiconductor device according to claim 17, wherein thethermoplastic resin is a polyphenylene oxide resin, a polyetherimideresin, or a fluorine resin.
 20. The semiconductor device according toclaim 13, wherein a light-transmitting resin layer is stacked over thechromatic color light-transmitting resin layer.
 21. The semiconductordevice according to claim 20, wherein a thickness of thelight-transmitting resin layer is larger than that of the chromaticcolor light-transmitting resin layer.
 22. The semiconductor deviceaccording to claim 13, wherein the bottom surface and the top surface ofthe light-transmitting substrate are quadrangles, and an area of thebottom surface is larger than an area of the top surface.
 23. Thesemiconductor device according to claim 13, wherein each of the firstand second semiconductor integrated circuits includes an amplifiercircuit for amplifying an output of the photoelectric conversionelement, and wherein the photoelectric conversion element has a layeredstructure in which a p-type semiconductor layer, an i-type semiconductorlayer, and an n-type semiconductor layer are stacked.
 24. Thesemiconductor device according to claim 13, wherein thelight-transmitting substrate is a glass substrate.
 25. A method formanufacturing a semiconductor device, comprising: cutting out a firstsemiconductor integrated circuit including a first chromatic colorlight-transmitting resin layer and a first photoelectric conversionelement from a first light-transmitting substrate; cutting out a secondsemiconductor integrated circuit including a second chromatic colorlight-transmitting resin layer and a second photoelectric conversionelement from a second light-transmitting substrate; cutting out a thirdsemiconductor integrated circuit including a third chromatic colorlight-transmitting resin layer and a third photoelectric conversionelement from a third light-transmitting substrate; providing the firstsemiconductor integrated circuit, the second semiconductor integratedcircuit, and the third semiconductor integrated circuit into openings ina structure body in which a fibrous body is impregnated with an organicresin; and bonding the first semiconductor integrated circuit, thesecond semiconductor integrated circuit, and the third semiconductorintegrated circuit to the structure body in which the fibrous body isimpregnated with the organic resin, wherein the first chromatic colorlight-transmitting resin layer, the second chromatic colorlight-transmitting resin layer, and the third chromatic colorlight-transmitting resin layer include different coloring materials. 26.The method for manufacturing a semiconductor device, according to claim25, further comprising performing an inspection step on the firstsemiconductor integrated circuit, the second semiconductor integratedcircuit, and the third semiconductor integrated circuit before bondingthe first semiconductor integrated circuit, the second semiconductorintegrated circuit, and the third semiconductor integrated circuit tothe structure body in which the fibrous body is impregnated with theorganic resin.
 27. The method for manufacturing a semiconductor device,according to claim 25, wherein the first chromatic colorlight-transmitting resin layer, the second chromatic colorlight-transmitting resin layer, and the third chromatic colorlight-transmitting resin layer which include a red coloring material, agreen coloring material, and a blue coloring material, respectively areformed.
 28. A method for manufacturing a semiconductor device,comprising: forming a plurality of semiconductor integrated circuitportions including photoelectric conversion elements over each of secondsurfaces of a first light-transmitting substrate, a secondlight-transmitting substrate, and a third light-transmitting substrate;reducing a thickness of each of the first light-transmitting substrate,the second light-transmitting substrate, and the thirdlight-transmitting substrate; forming a groove on each of first surfacesof the first light-transmitting substrate, the second light-transmittingsubstrate, and the third light-transmitting substrate, the groove beingoverlapped with a portion between the plurality of semiconductorintegrated circuit portions; forming a first chromatic colorlight-transmitting resin layer, a second chromatic colorlight-transmitting resin layer, and a third chromatic colorlight-transmitting resin layer over the first surfaces of the firstlight-transmitting substrate, the second light-transmitting substrate,and the third light-transmitting substrate in each of which the grooveis formed, respectively; cutting the first chromatic colorlight-transmitting resin layer and the first light-transmittingsubstrate along the groove of the first light-transmitting substrate,the second chromatic color light-transmitting resin layer and the secondlight-transmitting substrate along the groove of the secondlight-transmitting substrate, and the third chromatic colorlight-transmitting resin layer and the third light-transmittingsubstrate along the groove of the third light-transmitting substrate toform a first semiconductor integrated circuit, a second semiconductorintegrated circuit, and a third semiconductor integrated circuit;providing the first semiconductor integrated circuit, the secondsemiconductor integrated circuit, and the third semiconductor integratedcircuit into openings in a structure body in which a fibrous body isimpregnated with an organic resin; and bonding the first semiconductorintegrated circuit, the second semiconductor integrated circuit, and thethird semiconductor integrated circuit to the structure body in whichthe fibrous body is impregnated with the organic resin, wherein thefirst chromatic color light-transmitting resin layer, the secondchromatic color light-transmitting resin layer, and the third chromaticcolor light-transmitting resin layer include different coloringmaterials.
 29. The method for manufacturing a semiconductor device,according to claim 28, wherein a width of a cut surface of each of thegroove of the first light-transmitting substrate and the first chromaticcolor light-transmitting resin layer, the groove of the secondlight-transmitting substrate and the second chromatic colorlight-transmitting resin layer, and the groove of the thirdlight-transmitting substrate and the third chromatic colorlight-transmitting resin layer is smaller than a width of the groove.30. The method for manufacturing a semiconductor device, according toclaim 28, wherein the groove is formed with a dicer.
 31. The method formanufacturing a semiconductor device, according to claim 28, wherein thefirst chromatic color light-transmitting resin layer, the secondchromatic color light-transmitting resin layer, and the third chromaticcolor light-transmitting resin layer which include a red coloringmaterial, a green coloring material, and a blue coloring material,respectively are formed.
 32. A semiconductor device including at least afirst semiconductor integrated circuit and a second semiconductorintegrated circuit, each of the first semiconductor integrated circuitand the second semiconductor integrated circuit comprising: a structurebody having an opening wherein the structure body includes a fibrousbody impregnated with an organic resin; a light-transmitting substratehaving a first surface and a second surface opposite to the firstsurface, wherein the light-transmitting substrate includes a projectedportion on the first surface and a second portion adjacent to theprojected portion; a photoelectric conversion element on the secondsurface of the light-transmitting substrate; and a chromatic colorlight-transmitting resin layer which covers the projected portion andthe second portion adjacent to the light-transmitting substrate, whereinthe chromatic color light-transmitting resin layer of the firstsemiconductor integrated circuit has a different color from thechromatic color light-transmitting resin layer of the secondsemiconductor integrated circuit, and wherein the structure body isbonded to the light-transmitting substrate in such a manner that atleast the chromatic color light-transmitting resin layer is interposedbetween the structure body and the light-transmitting substrate, and theopening of the structure body corresponds to the projected portion. 33.The semiconductor device according to claim 32, wherein a cross sectionof the light-transmitting substrate has a shape of upside-down T inblock letter.
 34. The semiconductor device according to claim 32,wherein the fibrous body is a woven fabric or a nonwoven fabric.
 35. Thesemiconductor device according to claim 32, wherein the fibrous body isformed using a polyvinyl alcohol fiber, a polyester fiber, a polyamidefiber, a polyethylene fiber, an aramid fiber, a polyparaphenylenebenzobisoxazole fiber, a glass fiber, or a carbon fiber.
 36. Thesemiconductor device according to claim 32, wherein the organic resin isa thermosetting resin, a thermoplastic resin, or a photocurable resin.37. The semiconductor device according to claim 36, wherein thethermosetting resin is an epoxy resin, an unsaturated polyester resin, apolyimide resin, a bismaleimide-triazine resin, or a cyanate resin. 38.The semiconductor device according to claim 36, wherein thethermoplastic resin is a polyphenylene oxide resin, a polyetherimideresin, or a fluorine resin.
 39. The semiconductor device according toclaim 32, wherein a light-transmitting resin layer is stacked over thechromatic color light-transmitting resin layer.
 40. The semiconductordevice according to claim 39, wherein a thickness of thelight-transmitting resin layer is larger than that of the chromaticcolor light-transmitting resin layer.
 41. The semiconductor deviceaccording to claim 32, wherein the second surface and a top surface ofthe light-transmitting substrate are quadrangles, and an area of thesecond surface is larger than an area of the top surface.
 42. Thesemiconductor device according to claim 32, wherein each of the firstand second semiconductor integrated circuits includes an amplifiercircuit for amplifying an output of the photoelectric conversionelement, and wherein the photoelectric conversion element has a layeredstructure in which a p-type semiconductor layer, an i-type semiconductorlayer, and an n-type semiconductor layer are stacked.
 43. Thesemiconductor device according to claim 32, wherein thelight-transmitting substrate is a glass substrate.